TELEMETRY APPLICATIONS RF & MICROWAVE TRANSISTORS

DESCRIPTION The AM81719-030 is a high power silicon NPN bipolar transistor designed for Class C, CW communications and telemetry applications in the 1.75 - 1.85 GHz frequency range. An emitter site ballasted refractory/gold overlay die geometry computerized automatic wire bonding is employed to

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STMICROELECTRONICS

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RF & MICROWAVE TRANSISTORS TELEMETRY APPLICATIONS

DESCRIPTION The AM81719-040 is a high power silicon NPN bipolar transistor designed for Class C, CW communications and telemetry applications in the 1.75 - 1.85 GHz frequency range. An emitter-ballasted refractory-gold overlay die geometry with computerized automatic wire-bonding is employed to

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STMICROELECTRONICS

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COMMUNICATIONS APPLICATIONS RF & MICROWAVE TRANSISTORS

DESCRIPTION The AM81720-012 is designed specifically for Telecommunications applications. The device is capable of withstanding any mismatch load condition at any phase angle (VSWR ∞:1) under full rated conditions. The unit is an overlay, emitter site ballasted, geometry utilizing a refractory/g

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STMICROELECTRONICS

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N-CHANNEL ENHANCEMENT MODE POWER MOSFET

DESCRIPTION The AM8204 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. AM8204 is available in a SOT-26 package. FEATURES

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AITSEMI

创瑞科技

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

DESCRIPTION The AM8204 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. AM8204 is available in a SOT-26 package. FEATURES

文件：836.27 Kbytes 页数：9 Pages

AITSEMI

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N-CHANNEL ENHANCEMENT MODE POWER MOSFET

DESCRIPTION The AM8204 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. AM8204 is available in a SOT-26 package. FEATURES

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AITSEMI

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MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET

FEATURES  TSSOP8 VDS= 20V, ID= 6.2A RDS(ON) =21mΩ(Typ.)@ VGS= 4.5V RDS(ON) =22mΩ(Typ.)@ VGS= 4.0V RDS(ON) =23mΩ(Typ.)@VGS = 3.2V RDS(ON) =25mΩ(Typ.)@VGS = 2.5V  SOT-26 VDS = 20V, ID = 6A RDS(ON) =22mΩ(Typ.)@VGS = 4.5V RDS(ON) =25mΩ(Typ.)@VGS = 2.5V  Fast switch  High power and curr

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AITSEMI

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TELEMETRY APPLICATIONS RF & MICROWAVE TRANSISTORS

DESCRIPTION The AM82223-010 is a common base, silicon NPN bipolar transistor designed for high gain and efficiency in the 2.2 − 2.3 GHz frequency range. Suitable for hi-rel aerospace telemetry applications, the AM82223-010 is provided in the industry-standard AMPAC™ metal/ceramic hermetic packag

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STMICROELECTRONICS

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System Controller and Bus Driver for 8080A Compatible Microprocessors

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AMD

超威半导体

Clock Driver and Ready Interface for iAPX 286 Processors PRELMINARY

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INTEL

英特尔