NPN RF POWER TRANSISTOR

DESCRIPTION: The AM82731-050 is a Common Base Device Designed for Pulsed S-Band Pulse output and driver Applications. FEATURES INCLUDE: • Input/Output Matching • Gold Metallization • Emitter Ballasting

文件：81.8 Kbytes 页数：1 Pages

ASI

RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS

DESCRIPTION The AM83135-001 device is a medium power silicon bipolar NPN transistor specifically designed for S-Band radar pulsed driver applications. This device is capable of operation over a wide range of pulse widths, duty cycles and temperatures and can withstand a 10:1 output VSWR. Low RF

文件：78.96 Kbytes 页数：5 Pages

STMICROELECTRONICS

意法半导体

RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS

DESCRIPTION The AM83135-005 device is a medium power silicon bipolar NPN transistor specifically designed for S-Band radar pulsed driver applications. This device is capable of operation over a wide range of pulse widths. duty cycles and temperatures, and can withstand a 5:1 output VSWR. Low RF

文件：61.54 Kbytes 页数：4 Pages

STMICROELECTRONICS

意法半导体

RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS

DESCRIPTION The AM83135-010 device is a high power silicon bipolar NPN transistor specifically designed for S-Band radar pulsed output and driver applications. This device is characterized at 100µsec pulse width and 10 duty cycle, but is capable of operation over a range of pulse widths, duty cy

文件：61.46 Kbytes 页数：4 Pages

STMICROELECTRONICS

意法半导体

RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS

DESCRIPTION The AM83135-015 device is a high power silicon bipolar NPN transistor specifically designed for S-Band radar pulsed output and driver applications. This device is characterized at 100µsec pulse width and 10 duty cycle, but is capable of operation over a range of pulse widths, duty cy

文件：61.97 Kbytes 页数：3 Pages

STMICROELECTRONICS

意法半导体

RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS

DESCRIPTION The AM83135-030 device is a high power silicon bipolar NPN transistor specifically designed for SBand radar pulsed output and driver applications. This device is characterized at 100µsec pulse width and 10 duty cycle, but is capable of operation over a range of pulse widths, duty cyc

文件：57.5 Kbytes 页数：3 Pages

STMICROELECTRONICS

意法半导体

RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS

DESCRIPTION The AM83135-040 device is a high power silicon bipolar NPN transistor specifically designed for S-Band radar pulsed output and driver applications. This device is characterized at 10µsec pulse width and 10 duty cycle, but is capable of operation over a range of pulse widths, duty cyc

文件：44.56 Kbytes 页数：3 Pages

STMICROELECTRONICS

意法半导体

RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS

DESCRIPTION The AM83135-050 device is a high power silicon bipolar NPN transistor specifically designed for SBand radar pulsed output and driver applications. This device is characterized at 10 µsec pulsewidth and 10 duty cycle, but is capable of operation over a range of pulse widths, duty cycl

文件：93.54 Kbytes 页数：6 Pages

STMICROELECTRONICS

意法半导体

Enhanced Serial Communications Controller

GENERAL DESCRIPTION AMD’s Am85C30 is an enhanced pin-compatible version of the popular Am8530H Serial Communications Controller. The Enhanced Serial Communications Controller (ESCC) is a high-speed, low-power, multiprotocol communications peripheral designed for use with 8- and 16-bit microproces

文件：527.21 Kbytes 页数：68 Pages

AMD

超威半导体

Enhanced Serial Communications Controller

GENERAL DESCRIPTION AMD’s Am85C30 is an enhanced pin-compatible version of the popular Am8530H Serial Communications Controller. The Enhanced Serial Communications Controller (ESCC) is a high-speed, low-power, multiprotocol communications peripheral designed for use with 8- and 16-bit microproces

文件：527.21 Kbytes 页数：68 Pages

AMD

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