NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI AM80912-015 is designed for avionics applications, including JTIDS. It is housed in a Hermetic Package. FEATURES: • Internal Input/Output Matching Network • PG = 8.1 dB at 15 W/ 1215 MHz • Omnigold™ Metalization System • 28 V Operations • Common Base configuration

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ASI

AVIONICS APPLICATIONS RF & MICROWAVE TRANSISTORS

DESCRIPTION The AM80912-030 device is a high power Class C transistor specifically designed for JTIDS pulsed output and driver applications. This device is capable of operation over a wide range of pulse widths, duty cycles and temperatures and is capable of withstanding 15:1 output VSWR at rate

文件：94 Kbytes 页数：6 Pages

STMICROELECTRONICS

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AVIONICS APPLICATIONS RF & MICROWAVE TRANSISTORS

DESCRIPTION The AM80912-085 is designed for specialized avionics applications including JTIDS, where power is provided under pulse formats utilizing short pulse widths and high burst or overall duty cycles. ■ REFRACTORY/GOLD METALLIZATION ■ EMITTER SITE BALLASTED ■ 5:1 VSWR CAPABILITY ■ LOW T

文件：66.13 Kbytes 页数：5 Pages

STMICROELECTRONICS

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RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS

DESCRIPTION The AM81214-006 device is a high power Class C transistor specifically designed for L-Band Radar pulsed driver applications. ■ REFRACTORY/GOLD METALLIZATION ■ EMITTER SITE BALLASTED ■ 5:1 VSWR CAPABILITY ■ LOW THERMAL RESISTANCE ■ INPUT/OUTPUT MATCHING ■ OVERLAY GEOMETRY ■ META

文件：61.42 Kbytes 页数：4 Pages

STMICROELECTRONICS

意法半导体

L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS

DESCRIPTION The AM81214-006 device is a high power Class C transistor specifically designed for L-Band Radar pulsed driver applications. ■ REFRACTORY/GOLD METALLIZATION ■ EMITTER SITE BALLASTED ■ 5:1 VSWR CAPABILITY ■ LOW THERMAL RESISTANCE ■ INPUT/OUTPUT MATCHING ■ OVERLAY GEOMETRY ■ META

文件：64.03 Kbytes 页数：4 Pages

STMICROELECTRONICS

意法半导体

L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS

DESCRIPTION The AM81214-030 device is a high power transistor specifically designed for L-Band Radar pulsed driver applications. ■ REFRACTORY/GOLD METALLIZATION ■ EMITTER SITE BALLASTED ■ RUGGEDIZED VSWR ∞:1 ■ LOW THERMAL RESISTANCE ■ INPUT/OUTPUT MATCHING ■ OVERLAY GEOMETRY ■ METAL/CERAMI

文件：94.6 Kbytes 页数：6 Pages

STMICROELECTRONICS

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NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI AM81214-030 is Designed for 1215 – 1400 MHz, L-Band Radar Applications. FEATURES: • Internal Input/Output Matching Network • PG = 7.2 dB at 5.0 W(peak)/1400 MHz • Omnigold™ Metalization System

文件：45.4 Kbytes 页数：1 Pages

ASI

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI AM81214-060 is Designed for 1200 – 1400 MHz, L-Band Applications. FEATURES: • Internal Input/Output Matching Network • PG = 6.6 dB at 55 W/1400 MHz • Omnigold™ Metalization System

文件：66.2 Kbytes 页数：1 Pages

ASI

L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS

DESCRIPTION The AM81214-060 device is a high power transistor specifically designed for L-Band radar pulsed output and driver applications. ■ REFRACTORY/GOLD METALLIZATION ■ EMITTER SITE BALLASTED ■ RUGGEDIZED VSWR ∞:1 ■ LOW THERMAL RESISTANCE ■ INPUT/OUTPUT MATCHING ■ OVERLAY GEOMETRY ■ M

文件：95.27 Kbytes 页数：6 Pages

STMICROELECTRONICS

意法半导体

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI AM81214-300 is Designed for 1200 – 1400 MHz, L-Band Applications. FEATURES: • Internal Input/Output Matching Network • Common Base • PG = 6.5 db at 325 W/1400 MHz • Omnigold™ Metalization System

文件：17.97 Kbytes 页数：1 Pages

ASI