NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI AM81214-030 is Designed for 1215 – 1400 MHz, L-Band Radar Applications. FEATURES: • Internal Input/Output Matching Network • PG = 7.2 dB at 5.0 W(peak)/1400 MHz • Omnigold™ Metalization System

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ASI

L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS

DESCRIPTION The AM81214-030 device is a high power transistor specifically designed for L-Band Radar pulsed driver applications. ■ REFRACTORY/GOLD METALLIZATION ■ EMITTER SITE BALLASTED ■ RUGGEDIZED VSWR ∞:1 ■ LOW THERMAL RESISTANCE ■ INPUT/OUTPUT MATCHING ■ OVERLAY GEOMETRY ■ METAL/CERAMI

文件：94.6 Kbytes 页数：6 Pages

STMICROELECTRONICS

意法半导体

L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS

ST

意法半导体

BGA

INTEL

英特尔

上传：上海鑫科润电子科技有限公司

BGA

AMBIQ

上传：深圳市球芯贸易有限公司