Programmable Communications Interface

DISTINCTIVE CHARACTERISTICS • Improved performance with Am9551 • Separate control and transmit register input buffers • 8080A/9080A compatible • Synchronous or asynchronous serial data transfer • Parity, overrun and framing errors detected • Half or full duplex signalling • Character length

文件：438.42 Kbytes 页数：7 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Programmable DMA Controller

文件：519.7 Kbytes 页数：8 Pages

AMD

超威半导体

NPN RF POWER TRANSISTOR

DESCRIPTION: The AM82731 is a Common Base Device Designed for Pulsed S-Band Radar Amplifier Applications. FEATURES INCLUDE: • Input/Output Matching • Gold Metallization • Emitter Ballasting

文件：57.78 Kbytes 页数：1 Pages

ASI

NPN RF POWER TRANSISTOR

DESCRIPTION: The AM82731-001 is a Common Base Device Designed for Pulsed S-Band Radar Amplifier Applications. FEATURES INCLUDE: • Input/Output Matching • Gold Metallization • Emitter Ballasting

文件：65.28 Kbytes 页数：1 Pages

ASI

RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS

DESCRIPTION The AM82731-003 device is a medium power silicon bipolar NPN transistor specifically designed for S-Band radar pulsed driver applications. ■ REFRACTORY/GOLD METALLIZATION ■ EMITTER SITE BALLASTED ■ 10:1 VSWR CAPABILITY ■ LOW THERMAL RESISTANCE ■ INPUT/OUTPUT IMPEDANCE MATCHING ■

文件：61.87 Kbytes 页数：4 Pages

STMICROELECTRONICS

意法半导体

RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS

DESCRIPTION The AM82731-006 device is a medium power silicon bipolar NPN transistor specifically designed for S-Band radar pulsed driver applications. ■ REFRACTORY/GOLD METALLIZATION ■ EMITTER SITE BALLASTED ■ 5:1 VSWR CAPABILITY ■ LOW THERMAL RESISTANCE ■ INPUT/OUTPUT IMPEDANCE MATCHING ■

文件：67.94 Kbytes 页数：4 Pages

STMICROELECTRONICS

意法半导体

RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS

DESCRIPTION The AM82731-012 device is a high power silicon bipolar NPN transistor specifically designed for S-Band radar pulsed output and driver applications. ■ REFRACTORY/GOLD METALLIZATION ■ EMITTER SITE BALLASTED ■ LOW THERMAL RESISTANCE ■ INPUT/OUTPUT MATCHING ■ OVERLAY GEOMETRY ■ META

文件：56.75 Kbytes 页数：3 Pages

STMICROELECTRONICS

意法半导体

NPN RF POWER TRANSISTOR

DESCRIPTION: The AM82731-012 is a Common Base Device Designed for Pulsed S-Band Pulse output and driver Radar Amplifier Applications. FEATURES INCLUDE: • Input/Output Matching • Gold Metallization • Emitter Ballasting

文件：93.53 Kbytes 页数：1 Pages

ASI

RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS

DESCRIPTION The AM82731-025 device is a high power silicon bipolar NPNtransistor specifically designed forS-Band radar pulsed output and driver applications. ■ LOW PARASITIC, DOUBLE LEVEL METAL DESIGN ■ REFRACTORY/GOLD METALLIZATION ■ EMITTER SITE BALLASTED ■ 3:1 VSWR @ 1 dB OVERDRIVE ■ LOW

文件：60.81 Kbytes 页数：4 Pages

STMICROELECTRONICS

意法半导体

RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS

DESCRIPTION The AM82731-050 device is a high power silicon bipolar NPN transistor specifically designed for S-Band radar pulsed output and driver applications. ■ REFRACTORY/GOLD METALLIZATION ■ EMITTER SITE BALLASTED ■ RUGGEDIZED VSWR 3:1 @ 1 dB OVERDRIVE ■ LOW THERMAL RESISTANCE ■ INPUT/OUT

文件：61.05 Kbytes 页数：4 Pages

STMICROELECTRONICS

意法半导体