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AM82731

NPN RF POWER TRANSISTOR

DESCRIPTION: TheAM82731isaCommonBaseDeviceDesignedforPulsedS-BandRadarAmplifierApplications. FEATURESINCLUDE: •Input/OutputMatching •GoldMetallization •EmitterBallasting

ASI

Advanced Semiconductor

AM82731-001

NPN RF POWER TRANSISTOR

DESCRIPTION: TheAM82731-001isaCommonBaseDeviceDesignedforPulsedS-BandRadarAmplifierApplications. FEATURESINCLUDE: •Input/OutputMatching •GoldMetallization •EmitterBallasting

ASI

Advanced Semiconductor

AM82731-003

RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS

DESCRIPTION TheAM82731-003deviceisamediumpowersiliconbipolarNPNtransistorspecificallydesignedforS-Bandradarpulseddriverapplications. ■REFRACTORY/GOLDMETALLIZATION ■EMITTERSITEBALLASTED ■10:1VSWRCAPABILITY ■LOWTHERMALRESISTANCE ■INPUT/OUTPUTIMPEDANCEMATCHING ■

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

AM82731-006

RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS

DESCRIPTION TheAM82731-006deviceisamediumpowersiliconbipolarNPNtransistorspecificallydesignedforS-Bandradarpulseddriverapplications. ■REFRACTORY/GOLDMETALLIZATION ■EMITTERSITEBALLASTED ■5:1VSWRCAPABILITY ■LOWTHERMALRESISTANCE ■INPUT/OUTPUTIMPEDANCEMATCHING ■

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

AM82731-012

RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS

DESCRIPTION TheAM82731-012deviceisahighpowersiliconbipolarNPNtransistorspecificallydesignedforS-Bandradarpulsedoutputanddriverapplications. ■REFRACTORY/GOLDMETALLIZATION ■EMITTERSITEBALLASTED ■LOWTHERMALRESISTANCE ■INPUT/OUTPUTMATCHING ■OVERLAYGEOMETRY ■META

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

AM82731-012

NPN RF POWER TRANSISTOR

DESCRIPTION: TheAM82731-012isaCommonBaseDeviceDesignedforPulsedS-BandPulseoutputanddriverRadarAmplifierApplications. FEATURESINCLUDE: •Input/OutputMatching •GoldMetallization •EmitterBallasting

ASI

Advanced Semiconductor

AM82731-025

RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS

DESCRIPTION TheAM82731-025deviceisahighpowersiliconbipolarNPNtransistorspecificallydesignedforS-Bandradarpulsedoutputanddriverapplications. ■LOWPARASITIC,DOUBLELEVELMETALDESIGN ■REFRACTORY/GOLDMETALLIZATION ■EMITTERSITEBALLASTED ■3:1VSWR@1dBOVERDRIVE ■LOW

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

AM82731-050

RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS

DESCRIPTION TheAM82731-050deviceisahighpowersiliconbipolarNPNtransistorspecificallydesignedforS-Bandradarpulsedoutputanddriverapplications. ■REFRACTORY/GOLDMETALLIZATION ■EMITTERSITEBALLASTED ■RUGGEDIZEDVSWR3:1@1dBOVERDRIVE ■LOWTHERMALRESISTANCE ■INPUT/OUT

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

AM82731-050

NPN RF POWER TRANSISTOR

DESCRIPTION: TheAM82731-050isaCommonBaseDeviceDesignedforPulsedS-BandPulseoutputanddriverApplications. FEATURESINCLUDE: •Input/OutputMatching •GoldMetallization •EmitterBallasting

ASI

Advanced Semiconductor

AM82731-003

NPN RF POWER TRANSISTOR

ASI

Advanced Semiconductor

详细参数

  • 型号:

    AM82731

  • 制造商:

    ASI

  • 制造商全称:

    ASI

  • 功能描述:

    NPN RF POWER TRANSISTOR

供应商型号品牌批号封装库存备注价格
ST
24+
101
现货供应
询价
ST
23+
高频管
16900
正规渠道,只有原装!
询价
高频管
21+
9000
只做原装假一罚十
询价
ST
21+
高频管
23480
询价
ST
25+
高频管
16900
原装,请咨询
询价
ST/意法
23+
5000
原厂授权代理,海外优势订货渠道。可提供大量库存,详
询价
AMD
16+
QFP
2500
进口原装现货/价格优势!
询价
AMD
25+
QFP
6500
独立分销商 公司只做原装 诚心经营 免费试样正品保证
询价
INTEL
24+
BGA
3500
原装现货,可开13%税票
询价
INTEL
19+
BGA
256800
原厂代理渠道,每一颗芯片都可追溯原厂;
询价
更多AM82731供应商 更新时间2025-5-20 16:49:00