AM83135-001中文资料意法半导体数据手册PDF规格书

DESCRIPTION

The AM83135-001 device is a medium power silicon bipolar NPN transistor specifically designed for S-Band radar pulsed driver applications.

This device is capable of operation over a wide range of pulse widths, duty cycles and temperatures and can withstand a 10:1 output VSWR. Low RF thermal resistance, refractory/gold metallization, and automatic wire bonding techniques ensure high reliability and product consistency.

The AM83135-001 is supplied int the AMPAC™ Hermet ic/Ceramic package with internal Input/Output impedance matching circuitry, and is intended for military and other high reliability applications.

■ REFRACTORY/GOLD METALLIZATION

■ EMITTER SITE BALLASTED

■ 10:1 VSWR CAPABILITY

■ LOW THERMAL RESISTANCE

■ INPUT/OUTPUT MATCHING

■ OVERLAY GEOMETRY

■ METAL/CERAMIC HERMETIC PACKAGE

■ POUT = 1.0 W MIN. WITH 5.2 dB GAIN