AM8204E6VR资料使用说明书行情报价创瑞科技-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
AM8204E6VR	文件：836.27 Kbytes Page：9 Pages	N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The AM8204 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. AM8204 is available in a SOT-26 package. FEATURES 文件：836.27 Kbytes 页数：9 Pages	AITSEMI 创瑞科技	AITSEMI
AM8204E6R	文件：836.27 Kbytes Page：9 Pages	N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The AM8204 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. AM8204 is available in a SOT-26 package. FEATURES 文件：836.27 Kbytes 页数：9 Pages	AITSEMI 创瑞科技	AITSEMI
AM82801IUX	文件：0 bytes Page：0 Pages	INTEL BGA	Intel 英特尔上传：上海鑫科润电子科技有限公司	Intel
AMA3B1KK-KBR-B0	文件：0 bytes Page：0 Pages	AMBIQ BGA	AMBIQ 上传：深圳市球芯贸易有限公司	AMBIQ
AMA3B1KK-KBR-B0	文件：0 bytes Page：0 Pages	APPOLLO BGA	APPOLLO 上传：深圳市芯巴巴科技有限公司	APPOLLO

更多AM8204E6VR供应商更新时间2025-10-4 10:01:00