AM8204数据表ic资料库存现货创瑞科技-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
AM8204	文件：836.27 Kbytes Page：9 Pages	N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The AM8204 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. AM8204 is available in a SOT-26 package. FEATURES 文件：836.27 Kbytes 页数：9 Pages	AITSEMI 创瑞科技	AITSEMI
AM8204	文件：300 bytes Page：1 Pages	低压MOS管	AiT-Semi 创瑞科技	AiT-Semi
AM8204E6R	文件：836.27 Kbytes Page：9 Pages	N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The AM8204 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. AM8204 is available in a SOT-26 package. FEATURES 文件：836.27 Kbytes 页数：9 Pages	AITSEMI 创瑞科技	AITSEMI
AM8204E6VR	文件：836.27 Kbytes Page：9 Pages	N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The AM8204 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. AM8204 is available in a SOT-26 package. FEATURES 文件：836.27 Kbytes 页数：9 Pages	AITSEMI 创瑞科技	AITSEMI

更多AM8204供应商更新时间2026-1-17 11:06:00