AFGY160T65SPD

IGBT - Field Stop, Trench, Soft Fast Recovery Diode 650 V, 160 A

Benefits •VeryLowConductionandSwitchingLossesforaHighEfficiency OperationinVariousApplications •RuggedTransientReliability •OutstandingParallelOperationPerformancewithBalanceCurrentSharing •LowEMI Features •AEC−Q101QualifiedandPPAPCapable •VeryLowSaturat

AFGY160T65SPD-B4

Marking：AFGY160T65SPDA；Package：TO-247-3LD；Field Stop Trench IGBT With Soft Fast Recovery Diode and VCESAT, VTH Binning 650 V, 160 A

Features AEC−Q101QualifiedandPPAPCapable VeryLowSaturationVoltage:VCE(sat)=1.6V(Typ.)@IC=160A MaximumJunctionTemperature:TJ=175C PositiveTemperatureCo−Efficient TightParameterDistribution HighInputImpedance 100%ofthePartsareDynamicallyTes

AFGY160T65SPD-B4_V01

Field Stop Trench IGBT With Soft Fast Recovery Diode and VCESAT, VTH Binning 650 V, 160 A

Features AEC−Q101QualifiedandPPAPCapable VeryLowSaturationVoltage:VCE(sat)=1.6V(Typ.)@IC=160A MaximumJunctionTemperature:TJ=175C PositiveTemperatureCo−Efficient TightParameterDistribution HighInputImpedance 100%ofthePartsareDynamicallyTes

AFGY160T65SPD-B4

Marking：AFGY160T65SPDA；Package：TO-247-3LD；Field Stop Trench IGBT With Soft Fast Recovery Diode and VCESAT, VTH Binning

AFGY160T65SPD-B4

Package：TO-247-3；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT - 650V, 160A FIELD STOP TRE