IGBT - Field Stop, Trench, Soft Fast Recovery Diode 650 V, 160 A

Benefits • Very Low Conduction and Switching Losses for a High Efficiency Operation in Various Applications • Rugged Transient Reliability • Outstanding Parallel Operation Performance with Balance Current Sharing • Low EMI Features • AEC−Q101 Qualified and PPAP Capable • Very Low Saturat

文件：3.43739 Mbytes 页数：10 Pages

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丝印：AFGY160T65SPDA；Package：TO-247-3LD；Field Stop Trench IGBT With Soft Fast Recovery Diode and VCESAT, VTH Binning 650 V, 160 A

Features  AEC−Q101 Qualified and PPAP Capable  Very Low Saturation Voltage: VCE(sat) = 1.6 V (Typ.) @ IC = 160 A  Maximum Junction Temperature: TJ = 175C  Positive Temperature Co−Efficient  Tight Parameter Distribution  High Input Impedance  100% of the Parts are Dynamically Tes

文件：2.64198 Mbytes 页数：12 Pages

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安森美半导体

丝印：AFGY160T65SPDA；Package：TO-247-3LD；Field Stop Trench IGBT With Soft Fast Recovery Diode and VCESAT, VTH Binning

文件：2.58508 Mbytes 页数：11 Pages

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安森美半导体

Field Stop Trench IGBT With Soft Fast Recovery Diode and VCESAT, VTH Binning 650 V, 160 A

Features  AEC−Q101 Qualified and PPAP Capable  Very Low Saturation Voltage: VCE(sat) = 1.6 V (Typ.) @ IC = 160 A  Maximum Junction Temperature: TJ = 175C  Positive Temperature Co−Efficient  Tight Parameter Distribution  High Input Impedance  100% of the Parts are Dynamically Tes

文件：2.64198 Mbytes 页数：12 Pages

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安森美半导体

IGBT - 650V, 160A Field Stop Trench IGBT with VCESAT and VTH Binning

AFGY160T65SPD-B4 is a 650 V 160 A IGBT based on trench field stop 3 technology. This product is binned based on Vcesat and Vth i.e. thetop side marking on each individual unit defines the range of Vcesat and Vth the particular device has. This allows customers to assemble units in parallel that have • Vcesat and Vth binning\n• Better current sharing during paralleling operation\n• AEC-Q101 Qualified and PPAP Capable\n• Positive Temperature Co-Efficient\n• 100% of the Parts are Dynamically Tested\n• Short circuit ruggedness > 6us @ 25°C\n• This Device is Pb-Free, Halogen Free/BFR Free and ar;

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Package：TO-247-3；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT - 650V, 160A FIELD STOP TRE

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安森美半导体