型号：AFGY160T65SPD-B4；Package：TO-247-3LD；Field Stop Trench IGBT With Soft Fast Recovery Diode and VCESAT, VTH Binning 650 V, 160 A

Features  AEC−Q101 Qualified and PPAP Capable  Very Low Saturation Voltage: VCE(sat) = 1.6 V (Typ.) @ IC = 160 A  Maximum Junction Temperature: TJ = 175C  Positive Temperature Co−Efficient  Tight Parameter Distribution  High Input Impedance  100% of the Parts are Dynamically Tes

文件：2.64198 Mbytes 页数：12 Pages

安森美半导体

型号：AFGY160T65SPD-B4；Package：TO-247-3LD；Field Stop Trench IGBT With Soft Fast Recovery Diode and VCESAT, VTH Binning

文件：2.58508 Mbytes 页数：11 Pages

安森美半导体