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MP20056GJ-33

丝印:AFT;Package:TSOT23-5;Low-Noise, High-PSRR, 250mA Linear Regulator

文件:853.59 Kbytes 页数:15 Pages

MPS

美国芯源

MPQ20056GJ-33

丝印:AFT;Package:TSOT23-5;Low-Noise, High-PSRR, 250mA Linear Regulator AEC-Q100 Qualified

文件:1.14189 Mbytes 页数:16 Pages

MPS

美国芯源

MPQ20056GJ-33

丝印:AFT;Package:TSOT23-5;Low-Noise, High-PSRR, 250mA Linear Regulator AEC-Q100 Qualified

文件:855.45 Kbytes 页数:14 Pages

MPS

美国芯源

MPQ20056GJ-33-AEC1

丝印:AFT;Package:TSOT23-5;Low-Noise, High-PSRR, 250mA Linear Regulator AEC-Q100 Qualified

文件:1.14189 Mbytes 页数:16 Pages

MPS

美国芯源

MPQ20056GJ-33-AEC1

丝印:AFT;Package:TSOT23-5;Low-Noise, High-PSRR, 250mA Linear Regulator AEC-Q100 Qualified

文件:855.45 Kbytes 页数:14 Pages

MPS

美国芯源

AFT09S282N

N-Channel Enhancement-Mode Lateral MOSFET

This 80 watt RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 720 to 960 MHz. • Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ = 1400 mA, Pout = 80 Watts Avg., Input Signal PAR = 7.5 dB @ 0.01 Probability on CCDF Featu

文件:530.5 Kbytes 页数:14 Pages

恩XP

恩XP

AFT09S282NR3

RF Power LDMOS Transistor

This 80 watt RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 720 to 960 MHz. • Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ = 1400 mA, Pout = 80 Watts Avg., Input Signal PAR = 7.5 dB @ 0.01 Probability on CCDF Featu

文件:485.62 Kbytes 页数:14 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

AFT09S282NR3

N-Channel Enhancement-Mode Lateral MOSFET

This 80 watt RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 720 to 960 MHz. • Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ = 1400 mA, Pout = 80 Watts Avg., Input Signal PAR = 7.5 dB @ 0.01 Probability on CCDF Featu

文件:530.5 Kbytes 页数:14 Pages

恩XP

恩XP

AFT18HW355S

RF Power LDMOS Transistor

N--Channel Enhancement--Mode Lateral MOSFET This 63 watt asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1805 to 1880 MHz.  Typical Doherty Single--Carrier

文件:474.4 Kbytes 页数:16 Pages

恩XP

恩XP

AFT18HW355SR6

RF Power LDMOS Transistor

N--Channel Enhancement--Mode Lateral MOSFET This 63 watt asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1805 to 1880 MHz.  Typical Doherty Single--Carrier

文件:474.4 Kbytes 页数:16 Pages

恩XP

恩XP

供应商型号品牌批号封装库存备注价格
MPS/美国芯源
21+
TSOT23-5
6000
正规渠道原装正品
询价
MPS
24+
SOT23-5
90000
一级代理现货保证进口原装正品假一罚十价格优势
询价
MPS
20+
SOT23-5
49000
原装优势主营型号-可开原型号增税票
询价
MPS
23+
SOT23-5
30000
全新原装现货,价格优势
询价
Monolithic
1941+
N/A
909
加我qq或微信,了解更多详细信息,体验一站式购物
询价
MONOLITHIC
20+
SOT23-5
500
就找我吧!--邀您体验愉快问购元件!
询价
MPS
21+
TSOT23-5
500
全新原装 公司现货 价优
询价
MPS/美国芯源
16+
SOT23-5
486
原装/现货
询价
MPS
23+
SOT23-5
8678
原厂原装
询价
MPS/美国芯源
23+
SOT23-5
50000
全新原装正品现货,支持订货
询价
更多AFT供应商 更新时间2025-9-13 10:03:00