RF Power LDMOS Transistor

N--Channel Enhancement--Mode Lateral MOSFET This 63 watt asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1805 to 1880 MHz.  Typical Doherty Single--Carrier

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RF Power LDMOS Transistor

N--Channel Enhancement--Mode Lateral MOSFET This 63 watt asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1805 to 1880 MHz.  Typical Doherty Single--Carrier

文件：474.4 Kbytes 页数：16 Pages

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1805-1880 MHz，63 W平均值，28 V Airfast® LDMOS射频功率晶体管

The AFT18HW355SR6 63 watt asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1805 to 1880 MHz. • Advanced High Performance In-Package Doherty\n• Designed for Wide Instantaneous Bandwidth Applications\n• Greater Negative Gate-Source Voltage Range for Improved Class C Operation\n• Designed for Digital Predistortion Error Correction Systems\n• RoHS Compliant\n• In Tape and Reel. R6 Suffix = 150 ;

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