RF Power LDMOS Transistor

This 80 watt RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 720 to 960 MHz. • Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ = 1400 mA, Pout = 80 Watts Avg., Input Signal PAR = 7.5 dB @ 0.01 Probability on CCDF Featu

文件：485.62 Kbytes 页数：14 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

N-Channel Enhancement-Mode Lateral MOSFET

This 80 watt RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 720 to 960 MHz. • Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ = 1400 mA, Pout = 80 Watts Avg., Input Signal PAR = 7.5 dB @ 0.01 Probability on CCDF Featu

文件：530.5 Kbytes 页数：14 Pages

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