AFGY160T65SPD-B4分立半导体产品的晶体管-UGBT、MOSFET-单规格书PDF中文资料

AFGY160T65SPD-B4属于分立半导体产品的晶体管-UGBT、MOSFET-单。由安森美半导体制造生产的AFGY160T65SPD-B4晶体管 - UGBT、MOSFET - 单单 IGBT（绝缘栅双极晶体管）是一种具有三个端子的多层半导体器件，能够处理大电流，具有快速开关特性。其特征参数包括类型、集射极击穿电压、集电极电流、脉冲集电极电流、VCE(ON)、开关能量和栅极电荷。

特性 Features

 AEC−Q101 Qualified and PPAP Capable

 Very Low Saturation Voltage: VCE(sat) = 1.6 V (Typ.) @ IC = 160 A

 Maximum Junction Temperature: TJ = 175C

 Positive Temperature Co−Efficient

 Tight Parameter Distribution

 High Input Impedance

 100% of the Parts are Dynamically Tested

 Short Circuit Ruggedness > 6 s @ 25C

 Copacked with Soft, Fast Recovery Extremefast Diode

 This Device is Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

Benefits

 Very Low Conduction and Switching Losses for a High Efficiency

Operation in Various Applications

 Rugged Transient Reliability

 Outstanding Parallel Operation Performance with Balance Current

Sharing

 Low EMI

Applications

 Traction Inverter for HEV/EV

 Auxiliary DC/AC Converter

 Motor Drives

 Other Power−Train Applications Requiring High Power Switch