AFGY160T65SPD分立半导体产品的晶体管-UGBT、MOSFET-单规格书PDF中文资料

AFGY160T65SPD属于分立半导体产品的晶体管-UGBT、MOSFET-单。由安森美半导体制造生产的AFGY160T65SPD晶体管 - UGBT、MOSFET - 单单 IGBT（绝缘栅双极晶体管）是一种具有三个端子的多层半导体器件，能够处理大电流，具有快速开关特性。其特征参数包括类型、集射极击穿电压、集电极电流、脉冲集电极电流、VCE(ON)、开关能量和栅极电荷。

Benefits

• Very Low Conduction and Switching Losses for a High Efficiency

Operation in Various Applications

• Rugged Transient Reliability

• Outstanding Parallel Operation Performance with Balance Current Sharing

• Low EMI

特性 Features

• AEC−Q101 Qualified and PPAP Capable

• Very Low Saturation Voltage: VCE(sat) = 1.6 V (Typ.) @ IC = 160 A

• Maximum Junction Temperature: TJ = 175°C

• Positive Temperature Co−Efficient

• Tight Parameter Distribution

• High Input Impedance

• 100 of the Parts are Dynamically Tested

• Short circuit ruggedness > 6 s @ 25°C

• Copacked with Soft, Fast Recovery Extremefast Diode

• This Device is Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

Applications

• Traction Inverter for HEV/EV

• Auxiliary DC/AC Converter

• Motor Drives

• Other Power−Train Applications Requiring High Power Switch