丝印：AFQ；Package：sot-23；Medium Power Transistor

Features 1) Very low VCE(sat). VCE(sat) 0.4 V (Typ.) (IC / IB = 500mA / 50mA) 2) High current capacity in compact package. 3) Complements the FTB1197K 4) We declare that the material of product compliance with RoHS requirements. Structure Epitaxial planar type NPN silicon tran

文件：109.68 Kbytes 页数：4 Pages

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丝印：AFQ；Package：sot-23；Medium Power Transistor

Features 1) Very low VCE(sat). VCE(sat) 0.4 V (Typ.) (IC / IB = 500mA / 50mA) 2) High current capacity in compact package. 3) Complements the FTB1197K 4) We declare that the material of product compliance with RoHS requirements. Structure Epitaxial planar type NPN silicon tran

文件：109.68 Kbytes 页数：4 Pages

FS

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