| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
High-Speed,Single-Supply,Rail-to-RailOPERATIONALAMPLIFIERSMicroAmplifier??Series | BURR-BROWNTexas Instruments Incorporated 德州德州仪器 | BURR-BROWN | ||
High-Speed,Single-Supply,Rail-to-RailOPERATIONALAMPLIFIERSMicroAmplifier??Series | BURR-BROWNTexas Instruments Incorporated 德州德州仪器 | BURR-BROWN | ||
High-Speed,Single-Supply,Rail-to-RailOPERATIONALAMPLIFIERSMicroAmplifierSeries | BURR-BROWNTexas Instruments Incorporated 德州德州仪器 | BURR-BROWN | ||
Rail-to-RailOperationalAmplifiersMicroAmplifierSeries | TI1Texas Instruments(TI) 德州仪器德州仪器 (TI) | TI1 | ||
High-Speed,Single-Supply,Rail-to-RailOPERATIONALAMPLIFIERS | TI1Texas Instruments(TI) 德州仪器德州仪器 (TI) | TI1 | ||
High-Speed,Single-Supply,Rail-to-RailOPERATIONALAMPLIFIERSMicroAmplifierSeries | TITexas Instruments 德州仪器美国德州仪器公司 | TI | ||
50VlowVCEsatNPNtransistor DESCRIPTION NPNlowVCEsattransistorinaSOT223plasticpackage.PNPcomplement:PBSS5350Z. FEATURES •Lowcollector-emittersaturationvoltage •Highcollectorcurrentcapability:ICandICM •Highcollectorcurrentgain(hFE)athighIC •Higherefficiencyleadingtolessheatgeneration | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | nxp | ||
50VlowVCEsatNPNtransistor DESCRIPTION NPNlowVCEsattransistorinaSOT223plasticpackage.PNPcomplement:PBSS5350Z. FEATURES •Lowcollector-emittersaturationvoltage •Highcollectorcurrentcapability:ICandICM •Highcollectorcurrentgain(hFE)athighIC •Higherefficiencyleadingtolessheatgeneration | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
50VlowVCEsatNPNtransistor | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
NPNtransistor DESCRIPTION NPNlowVCEsattransistorinaSOT457(SC-74)plasticpackage.PNPcomplement:PBSS5350D. FEATURES •Lowcollector-emittersaturationvoltage •Highcurrentcapability •Improveddevicereliabilityduetoreducedheatgeneration •ReplacementforSOT89/SOT223standar | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
50VlowVCEsatNPNtransistor DESCRIPTION NPNlowVCEsattransistorinaSOT54plasticpackage.PNPcomplement:PBSS5350S. FEATURES •Highpowerdissipation(830mW) •Ultralowcollector-emittersaturationvoltage •3Acontinuouscurrent •Highcurrentswitching •Improveddevicereliabilityduetoreducedheatgenerat | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
NPNtransistor DESCRIPTION NPNlowVCEsattransistorinaSOT457(SC-74)plasticpackage.PNPcomplement:PBSS5350D. FEATURES •Lowcollector-emittersaturationvoltage •Highcurrentcapability •Improveddevicereliabilityduetoreducedheatgeneration •ReplacementforSOT89/SOT223standar | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
50VlowVCEsatNPNtransistor DESCRIPTION NPNlowVCEsattransistorinaSOT457(SC-74)plasticpackage.PNPcomplement:PBSS5350D. FEATURES •Lowcollector-emittersaturationvoltage •Highcurrentcapability •Improveddevicereliabilityduetoreducedheat generation •ReplacementforSOT89/SOT223standardpackage | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | nxp | ||
LowVCEsat(BISS)transistors | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
50VlowVCEsatNPNtransistor FEATURES •Lowcollector-emittersaturationvoltage •Highcurrentcapability •Improveddevicereliabilityduetoreducedheatgeneration •ReplacementforSOT89/SOT223standardpackagedtransistorsduetoenhancedperformance. APPLICATIONS •Supplylineswitchingcircuits •Batterymanagement | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
50VlowVCEsatNPNtransistor DESCRIPTION NPNlowVCEsattransistorinaSOT54plasticpackage.PNPcomplement:PBSS5350S. FEATURES •Highpowerdissipation(830mW) •Ultralowcollector-emittersaturationvoltage •3Acontinuouscurrent •Highcurrentswitching •Improveddevicereliabilityduetoreducedheatgenerat | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
50V,2.7APNP/PNPlowVCEsat(BISS)transistor Generaldescription PNP/PNPdoublelowVCEsatBreakthroughInSmallSignal(BISS)transistorinamediumpowerSurface-MountedDevice(SMD)plasticpackage. Features ■Lowcollector-emittersaturationvoltageVCEsat ■HighcollectorcurrentcapabilityICandICM ■Highcollectorcurrentgain | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | nxp | ||
50V,2.7ANPN/NPNlowVCEsat(BISS)transistor Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
50V,2.7ANPN/PNPlowVCEsat(BISS)transistor Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
50V,2.7ANPN/PNPlowVCEsat(BISS)transistor Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA |
详细参数
- 型号：
ADF4350
- 制造商：
AD
- 制造商全称：
Analog Devices
- 功能描述：
Wideband Synthesizer with Integrated VCO
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ADI(亚德诺) |
10000 |
询价 | |||||
ADI(亚德诺) |
23+ |
N/A |
589610 |
新到现货 原厂一手货源 价格秒杀代理! |
询价 | ||
ADI(亚德诺) |
23+ |
NA |
10000 |
原装正品!假一罚十! |
询价 | ||
ADI |
726222 |
询价 | |||||
AD |
23+ |
LFCSP |
88000 |
询价 | |||
AD |
1436+ |
QFN |
30000 |
绝对原装进口现货可开17%增值税发票 |
询价 | ||
ADI |
2018+ |
SMD |
5500 |
ADI一级代理商绝对进口原装假一赔十 |
询价 | ||
AD |
18+ |
QFN |
85600 |
保证进口原装可开17%增值税发票 |
询价 | ||
23+ |
N/A |
90250 |
正品授权货源可靠 |
询价 | |||
ADS |
2023+ |
SMD |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
询价 |
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