| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
P-CHANNELPOWERMOSFETS FEATURES •LowRDS(on) •Improvedinductiveruggedness •Fsatswitchingtimes •Ruggedpolysilicongatecellstructure •Lowinputcapacitance •Extendedsafeoperatingarea •Improvedhightemperaturereliability | SamsungSamsung Group 三星三星半导体 | Samsung | ||
PowerMOSFET(Vdss=-100V,Rds(on)=0.117ohm,Id=-23A) Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
19A,100V,0.200Ohm,P-ChannelPowerMOSFETs TheseareP-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchas | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
PowerMOSFET | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
P-CHANNELPOWERMOSFETS Description TheIRF9540,IRF9541,IRF9542,IRF9543,RF1S9540,andRF1S9540SMareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.TheseareP-Channelenhancementmodesilicongatepowerfieldeffecttran | HARRIS HARRIS corporation | HARRIS | ||
AdvancedProcessTechnology Description TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipationlevelstoapproximately50watts.ThelowthermalresistanceandlowpackagecostoftheTO-220contributetoitswideacceptancethroughouttheindustry. ●AdvancedProcessTe | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
P-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
PowerMOSFET(Vdss=-100V,Rds(on)=0.117ohm,Id=-23A) Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
PowerMOSFET(Vdss=-100V,Rds(on)=0.117ohm,Id=-23A) Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
AdvancedProcessTechnology Description TheD2PakisasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itprovidesthehighestpowercapabilityandthelowestpossibleon-resistanceinanyexistingsurfacemountpackage.TheD2Pakissuitableforhighcurrentapplicationsbecauseofitslowinter | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
iscP-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
HEXFETPOWERMOSFET(VDSS=-100V,RDS(on)=117m廓,ID=-23A) Description Featuresofthisdesignarea150°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescombinetomakethisdesignanextremelyefficientandreliabledeviceforuseinawidevarietyofotherapplications. ●AdvancedProces | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
HEXFET짰PowerMOSFET
| IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
AdvancedProcessTechnology
| KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
ADVANCEDPROCESSTECHNOLOGY | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
iscP-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
AdvancedProcessTechnology | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
PowerMOSFET(Vdss=-100V,Rds(on)=0.117ohm,Id=-23A) Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
AdvancedProcessTechnology | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
HEXFETPOWERMOSFET(VDSS=-100V,RDS(on)=117m廓,ID=-23A) Description Featuresofthisdesignarea150°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescombinetomakethisdesignanextremelyefficientandreliabledeviceforuseinawidevarietyofotherapplications. ●AdvancedProces | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
PHILIPS |
23+ |
MSOP8 |
10000 |
全新原装 |
询价 | ||
Abbatron/HHSmith |
新 |
5 |
全新原装 货期两周 |
询价 | |||
Abbatron / HH Smith |
2022+ |
1 |
全新原装 货期两周 |
询价 | |||
ABBATRON HH SMITH |
2308+ |
549043 |
一级代理,原装正品,公司现货! |
询价 | |||
ABBATRON HH SMITH |
19749+ |
con |
109 |
现货常备产品原装可到京北通宇商城查价格 |
询价 | ||
进口原装 |
23+ |
SSOP-8 |
1050 |
优势库存 |
询价 | ||
PHI |
06+ |
SSOP8 |
2 |
询价 | |||
NXP/恩智浦 |
22+ |
MSOP8 |
9845 |
只做原装正品现货!或订货假一赔十! |
询价 | ||
NXP/恩智浦 |
22+ |
MSOP8 |
100000 |
代理渠道/只做原装/可含税 |
询价 | ||
PHILIPS/飞利浦 |
22+ |
SOP8 |
3000 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
询价 |
相关规格书
更多- 95640W6
- 97C2051
- 98-0244
- 9933
- 9953
- 9P-50594B
- A1010B
- A1015
- A1020B-PL68C
- A1020B-PL84C
- A11560
- A1280XL
- A1303
- A1600
- A1701
- A1706
- A1712
- A18721
- A2004G
- A21SC
- A2630
- A276308AL-70
- A290021TL-70
- A2918SW
- A2982SLW
- A2C22207
- A3144EU
- A3150
- A3402SJ
- A3546
- A3558
- A358F
- A3948SLB
- A3952SLB
- A3953SB
- A3955SB
- A3956SLB
- A3957SLB
- A3958SB
- A3958SLBTR
- A3964SB
- A3966SLB
- A3967SLB
- A3974SED
- A3977SLP
相关库存
更多- 957B
- 98-0086
- 9926
- 9936
- 9956
- A101
- A1010B-PL68C
- A1020B
- A1020BPL84C
- A103267
- A1240XLPL84C
- A1302
- A1360
- A1700
- A1703
- A1710
- A176B
- A2003G
- A2187
- A2531
- A2631
- A290011TL-70
- A2917SEB
- A2919SLB
- A2C20219
- A3120
- A314J
- A316J
- A3545
- A3548
- A3568C
- A3933SEQ
- A3952SB
- A3952SW
- A3953SLB
- A3955SLB
- A3956SLB-24
- A3957SLB-A
- A3958SLB
- A3962SLB
- A3964SLB
- A3966SLBTR
- A3972SB
- A3977SED
- A40MX04-F
