Power MOSFET(Vdss=-30V, Rds(on)=0.25ohm)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件：107.4 Kbytes 页数：7 Pages

IRF

Electronic, 3 C #16 Str TC, PVC-NYL Ins, OA TC Brd, PVC Jkt

Product Description Electronic, 3 Conductor 16AWG (19x29) Tinned Copper, PVC-NYL Insulation, Overall Tinned Copper Braid(90) Shield, PVC Outer Jacket

文件：148.92 Kbytes 页数：2 Pages

BELDEN

百通

Electronic, 3 C #16 Str TC, PVC-NYL Ins, OA TC Brd, PVC Jkt

Product Description Electronic, 3 Conductor 16AWG (19x29) Tinned Copper, PVC-NYL Insulation, Overall Tinned Copper Braid(90) Shield, PVC Outer Jacket

文件：148.92 Kbytes 页数：2 Pages

BELDEN

百通

Electronic, 3 C #16 Str TC, PVC-NYL Ins, OA TC Brd, PVC Jkt

Product Description Electronic, 3 Conductor 16AWG (19x29) Tinned Copper, PVC-NYL Insulation, Overall Tinned Copper Braid(90) Shield, PVC Outer Jacket

文件：148.92 Kbytes 页数：2 Pages

BELDEN

百通

Electronic, 3 C #16 Str TC, PVC-NYL Ins, OA TC Brd, PVC Jkt

Product Description Electronic, 3 Conductor 16AWG (19x29) Tinned Copper, PVC-NYL Insulation, Overall Tinned Copper Braid(90) Shield, PVC Outer Jacket

文件：148.92 Kbytes 页数：2 Pages

BELDEN

百通

Dual P-Channel Enhancement Mode MOSFET

FEATURES ■ -30V, -2.9A, RDS(ON) = 100mΩ @VGS = -10V. RDS(ON) = 150mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Surface mount Package.

文件：500.84 Kbytes 页数：5 Pages

CET

华瑞

Dual P-Channel Enhancement Mode MOSFET

CET

华瑞

包装：线轴 类别：电缆，电线 多芯导线 描述：CBL 3COND 16AWG SHLD

HIRSCHMANN

包装：线轴 类别：电缆，电线 多芯导线 描述：CBL 3COND 16AWG SHLD

HIRSCHMANN

包装：散装 类别：连接器，互连器件 线对板 描述：TERM BLK 7POS SIDE ENT 7.5MM PCB

Weidmüller