Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件：125.1 Kbytes 页数：8 Pages

IRF

Advanced Process Technology

Description The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. ● Advanced Process Te

文件：738.06 Kbytes 页数：8 Pages

KERSEMI

P-Channel MOSFET Transistor

文件：334.83 Kbytes 页数：2 Pages

ISC

无锡固电

Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件：187.11 Kbytes 页数：10 Pages

IRF

Advanced Process Technology

Description The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low inter

文件：1.22225 Mbytes 页数：10 Pages

KERSEMI

HEXFET POWER MOSFET (VDSS = -100V , RDS(on) = 117m廓 , ID = -23A )

Description Features of this design are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of other applications. ● Advanced Proces

文件：331.4 Kbytes 页数：11 Pages

IRF

HEXFET짰 Power MOSFET

文件：2.55413 Mbytes 页数：9 Pages

IRF

Advanced Process Technology

文件：6.34203 Mbytes 页数：8 Pages

KERSEMI

Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件：187.11 Kbytes 页数：10 Pages

IRF

HEXFET POWER MOSFET (VDSS = -100V , RDS(on) = 117m廓 , ID = -23A )

Description Features of this design are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of other applications. ● Advanced Proces

文件：331.4 Kbytes 页数：11 Pages

IRF