2.00mm (.079) Pitch Crimp Housing, Single Row, 16 Circuits

文件：100.8 Kbytes 页数：2 Pages

Molex

莫仕

丝印：87312E；Package：VSON；Dual 30-V N-Channel NexFET™ Power MOSFETs

1FEATURES • Common Source Connection • Ultra Low Drain to Drain On-Resistance • Space Saving SON 3.3 x 3.3mm Plastic Package • Optimized for 5V Gate Drive • Low Thermal Resistance • Avalanche Rated • Pb Free Terminal Plating • RoHS Compliant • Halogen Free APPLICATIONS • Adaptor/USB

文件：536.83 Kbytes 页数：15 Pages

TI

德州仪器

丝印：87312E；Package：VSON；Dual 30-V N-Channel NexFET™ Power MOSFETs

1FEATURES • Common Source Connection • Ultra Low Drain to Drain On-Resistance • Space Saving SON 3.3 x 3.3mm Plastic Package • Optimized for 5V Gate Drive • Low Thermal Resistance • Avalanche Rated • Pb Free Terminal Plating • RoHS Compliant • Halogen Free APPLICATIONS • Adaptor/USB

文件：536.83 Kbytes 页数：15 Pages

TI

德州仪器

丝印：87330D；Package：VSON-CLIP；CSD87330Q3D Synchronous Buck NexFET™ Power Block

1 Features 1• Half-Bridge Power Block • Up to 27-V VIN • 90% System Efficiency at 15 A • Up to 20-A Operation • High-Frequency Operation (Up to 1.5 MHz) • High-Density SON 3.3-mm × 3.3-mm Footprint • Optimized for 5-V Gate Drive • Low-Switching Losses • Ultra-Low Inductance Package •

文件：637.48 Kbytes 页数：24 Pages

TI

德州仪器

丝印：87330D；Package：VSON-CLIP(DPB)；CSD87330Q3D Synchronous Buck NexFET™ Power Block

1 Features 1• Half-Bridge Power Block • Up to 27-V VIN • 90% System Efficiency at 15 A • Up to 20-A Operation • High-Frequency Operation (Up to 1.5 MHz) • High-Density SON 3.3-mm × 3.3-mm Footprint • Optimized for 5-V Gate Drive • Low-Switching Losses • Ultra-Low Inductance Package •

文件：637.9 Kbytes 页数：24 Pages

TI

德州仪器

丝印：87330D；Package：VSON-CLIP(DPB)；CSD87330Q3D Synchronous Buck NexFET™ Power Block

1 Features 1• Half-Bridge Power Block • Up to 27-V VIN • 90% System Efficiency at 15 A • Up to 20-A Operation • High-Frequency Operation (Up to 1.5 MHz) • High-Density SON 3.3-mm × 3.3-mm Footprint • Optimized for 5-V Gate Drive • Low-Switching Losses • Ultra-Low Inductance Package •

文件：637.9 Kbytes 页数：24 Pages

TI

德州仪器

丝印：87330D；Package：VSON-CLIP；CSD87330Q3D Synchronous Buck NexFET™ Power Block

1 Features 1• Half-Bridge Power Block • Up to 27-V VIN • 90% System Efficiency at 15 A • Up to 20-A Operation • High-Frequency Operation (Up to 1.5 MHz) • High-Density SON 3.3-mm × 3.3-mm Footprint • Optimized for 5-V Gate Drive • Low-Switching Losses • Ultra-Low Inductance Package •

文件：637.48 Kbytes 页数：24 Pages

TI

德州仪器

丝印：87330D；Package：VSON-CLIP(DPB)；CSD87330Q3D Synchronous Buck NexFET™ Power Block

1 Features 1• Half-Bridge Power Block • Up to 27-V VIN • 90% System Efficiency at 15 A • Up to 20-A Operation • High-Frequency Operation (Up to 1.5 MHz) • High-Density SON 3.3-mm × 3.3-mm Footprint • Optimized for 5-V Gate Drive • Low-Switching Losses • Ultra-Low Inductance Package •

文件：637.9 Kbytes 页数：24 Pages

TI

德州仪器

丝印：87330D；Package：VSON-CLIP(DPB)；CSD87330Q3D Synchronous Buck NexFET™ Power Block

1 Features 1• Half-Bridge Power Block • Up to 27-V VIN • 90% System Efficiency at 15 A • Up to 20-A Operation • High-Frequency Operation (Up to 1.5 MHz) • High-Density SON 3.3-mm × 3.3-mm Footprint • Optimized for 5-V Gate Drive • Low-Switching Losses • Ultra-Low Inductance Package •

文件：637.9 Kbytes 页数：24 Pages

TI

德州仪器

丝印：87330D；Package：VSON-CLIP；CSD87330Q3D Synchronous Buck NexFET™ Power Block

1 Features 1• Half-Bridge Power Block • Up to 27-V VIN • 90% System Efficiency at 15 A • Up to 20-A Operation • High-Frequency Operation (Up to 1.5 MHz) • High-Density SON 3.3-mm × 3.3-mm Footprint • Optimized for 5-V Gate Drive • Low-Switching Losses • Ultra-Low Inductance Package •

文件：637.48 Kbytes 页数：24 Pages

TI

德州仪器