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CSD87312Q3E中文资料德州仪器数据手册PDF规格书
CSD87312Q3E规格书详情
1FEATURES
• Common Source Connection
• Ultra Low Drain to Drain On-Resistance
• Space Saving SON 3.3 x 3.3mm Plastic
Package
• Optimized for 5V Gate Drive
• Low Thermal Resistance
• Avalanche Rated
• Pb Free Terminal Plating
• RoHS Compliant
• Halogen Free
APPLICATIONS
• Adaptor/USB Input Protection for Notebook
PCs and Tablets
DESCRIPTION
The CSD87312Q3E is a 30V common-source, dual
N-channel device designed for adaptor/USB input
protection. This SON 3.3 x 3.3mm device has low
drain to drain on-resistance that minimizes losses and
offers low component count for space constrained
multi-cell battery charging applications.
产品属性
- 型号:
CSD87312Q3E
- 功能描述:
MOSFET Dual 30V N-CH NexFET Pwr MOSFETs
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
TI/德州仪器 |
23+ |
QFN |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
TI |
21+ |
VSON8 |
43385 |
原装现货假一赔十 |
询价 | ||
NA |
23+ |
NA |
26094 |
10年以上分销经验原装进口正品,做服务型企业 |
询价 | ||
TI(德州仪器) |
24+ |
VSON8 |
17048 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
询价 | ||
TI/德州仪器 |
22+ |
QFN |
30000 |
十七年VIP会员,诚信经营,一手货源,原装正品可零售! |
询价 | ||
TI/德州仪器 |
23+ |
VSON-8 |
12700 |
买原装认准中赛美 |
询价 | ||
TI |
25+ |
QFN |
10000 |
原装正品,假一罚十! |
询价 | ||
TI(德州仪器) |
23+ |
VSON-8 |
15000 |
专业帮助客户找货 配单,诚信可靠! |
询价 | ||
TI |
25+ |
VSON-8 |
8800 |
公司只做原装,详情来电咨询 |
询价 | ||
TI |
22+ |
8-SON |
25000 |
只有原装原装,支持BOM配单 |
询价 |