丝印：85302；Package：PICOSTAR；CSD85302L 20 V Dual N-Channel NexFET™ Power MOSFET

1 Features 1• Common Drain Configuration • Low On-Resistance • Small Footprint of 1.35 mm × 1.35 mm • Pb Free and Halogen Free • RoHS Compliant • ESD HBM Protection >2.5 kV 2 Applications • USB Type-C/PD • Battery Management • Battery Protection 3 Description This 20 V, 18.7 mΩ, 1.

文件：474.29 Kbytes 页数：12 Pages

TI

德州仪器

丝印：85302；Package：PICOSTAR；CSD85302L 20 V Dual N-Channel NexFET™ Power MOSFET

1 Features 1• Common Drain Configuration • Low On-Resistance • Small Footprint of 1.35 mm × 1.35 mm • Pb Free and Halogen Free • RoHS Compliant • ESD HBM Protection >2.5 kV 2 Applications • USB Type-C/PD • Battery Management • Battery Protection 3 Description This 20 V, 18.7 mΩ, 1.

文件：474.29 Kbytes 页数：12 Pages

TI

德州仪器

丝印：85302；Package：PICOSTAR；CSD85302L 20 V Dual N-Channel NexFET™ Power MOSFET

1 Features 1• Common Drain Configuration • Low On-Resistance • Small Footprint of 1.35 mm × 1.35 mm • Pb Free and Halogen Free • RoHS Compliant • ESD HBM Protection >2.5 kV 2 Applications • USB Type-C/PD • Battery Management • Battery Protection 3 Description This 20 V, 18.7 mΩ, 1.

文件：474.29 Kbytes 页数：12 Pages

TI

德州仪器

丝印：85302；Package：PICOSTAR；CSD85302L 20 V Dual N-Channel NexFET™ Power MOSFET

1 Features 1• Common Drain Configuration • Low On-Resistance • Small Footprint of 1.35 mm × 1.35 mm • Pb Free and Halogen Free • RoHS Compliant • ESD HBM Protection >2.5 kV 2 Applications • USB Type-C/PD • Battery Management • Battery Protection 3 Description This 20 V, 18.7 mΩ, 1.

文件：474.29 Kbytes 页数：12 Pages

TI

德州仪器