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CSD85302LT.B中文资料德州仪器数据手册PDF规格书
CSD85302LT.B规格书详情
1 Features
1• Common Drain Configuration
• Low On-Resistance
• Small Footprint of 1.35 mm × 1.35 mm
• Pb Free and Halogen Free
• RoHS Compliant
• ESD HBM Protection >2.5 kV
2 Applications
• USB Type-C/PD
• Battery Management
• Battery Protection
3 Description
This 20 V, 18.7 mΩ, 1.35 mm × 1.35 mm LGA Dual
NexFET™ power MOSFET is designed to minimize
resistance in the smallest footprint. Its small footprint
and common drain configuration make the device
ideal for battery-powered applications in small
handheld devices.
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TI |
23+ |
VSON-8 |
3200 |
公司只做原装，可来电咨询 |
询价 | ||
TI |
23+ |
N/A |
7000 |
询价 | |||
TI |
16+ |
VSON |
10000 |
原装正品 |
询价 | ||
TI(德州仪器) |
2447 |
VSON-8 |
115000 |
2500个/圆盘一级代理专营品牌!原装正品,优势现货, |
询价 | ||
TI德州仪器 |
22+ |
24000 |
原装正品现货,实单可谈,量大价优 |
询价 | |||
Texas Instruments |
2022+ |
8-VSON(3.3x3.3) |
38550 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 | ||
TI/德州仪器 |
24+ |
SON3X3 |
47186 |
郑重承诺只做原装进口现货 |
询价 | ||
TI |
23+ |
NA |
6800 |
原装正品,力挺实单 |
询价 | ||
TI/德州仪器 |
2023+ |
VSON8 |
45000 |
一级代理优势现货,全新正品直营店 |
询价 | ||
TI |
25+ |
(DPA) |
6000 |
原厂原装,价格优势 |
询价 |
