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CSD85302L.B中文资料德州仪器数据手册PDF规格书
CSD85302L.B规格书详情
1 Features
1• Common Drain Configuration
• Low On-Resistance
• Small Footprint of 1.35 mm × 1.35 mm
• Pb Free and Halogen Free
• RoHS Compliant
• ESD HBM Protection >2.5 kV
2 Applications
• USB Type-C/PD
• Battery Management
• Battery Protection
3 Description
This 20 V, 18.7 mΩ, 1.35 mm × 1.35 mm LGA Dual
NexFET™ power MOSFET is designed to minimize
resistance in the smallest footprint. Its small footprint
and common drain configuration make the device
ideal for battery-powered applications in small
handheld devices.
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TI/德州仪器 |
25+ |
原厂封装 |
10280 |
原厂授权代理,专注军工、汽车、医疗、工业、新能源！ |
询价 | ||
TI |
18+19+ |
QFN |
13400 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
TI/德州仪器 |
2450+ |
PICOSTAR(YME)4 |
9850 |
只做原厂原装正品现货或订货假一赔十! |
询价 | ||
22+ |
5000 |
只做原装鄙视假货15118075546 |
询价 | ||||
TI/德州仪器 |
24+ |
VSON-8 |
2536 |
只供应原装正品 欢迎询价 |
询价 | ||
TI |
25+ |
(YME) |
6000 |
原厂原装,价格优势 |
询价 | ||
TI/德州仪器 |
23+ |
4-XFLGA |
3126 |
原装正品代理渠道价格优势 |
询价 | ||
TI |
16+ |
VSON |
10000 |
原装正品 |
询价 | ||
TI/德州仪器 |
25+ |
原厂封装 |
9999 |
询价 | |||
TI(德州仪器) |
2021+ |
8000 |
原装现货，欢迎询价 |
询价 |
