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71V2556SA100BGG8

128K x 36 3.3V Synchronous ZBT™ SRAMs 2.5V I/O, Burst Counter Pipelined Outputs

Features ◆128Kx36memoryconfigurations ◆Supportshighperformancesystemspeed-166MHz (3.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(READ/WRI

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

71V2556SA100BGGI

128K x 36 3.3V Synchronous ZBT™ SRAMs 2.5V I/O, Burst Counter Pipelined Outputs

Features ◆128Kx36memoryconfigurations ◆Supportshighperformancesystemspeed-166MHz (3.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(READ/WRI

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

71V2556SA100BGGI8

128K x 36 3.3V Synchronous ZBT™ SRAMs 2.5V I/O, Burst Counter Pipelined Outputs

Features ◆128Kx36memoryconfigurations ◆Supportshighperformancesystemspeed-166MHz (3.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(READ/WRI

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

71V2556SA100BGI

128K x 36 3.3V Synchronous ZBT™ SRAMs 2.5V I/O, Burst Counter Pipelined Outputs

Features ◆128Kx36memoryconfigurations ◆Supportshighperformancesystemspeed-166MHz (3.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(READ/WRI

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

71V2556SA100BGI8

128K x 36 3.3V Synchronous ZBT™ SRAMs 2.5V I/O, Burst Counter Pipelined Outputs

Features ◆128Kx36memoryconfigurations ◆Supportshighperformancesystemspeed-166MHz (3.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(READ/WRI

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

71V2556SA133BG

128K x 36 3.3V Synchronous ZBT™ SRAMs 2.5V I/O, Burst Counter Pipelined Outputs

Features ◆128Kx36memoryconfigurations ◆Supportshighperformancesystemspeed-166MHz (3.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(READ/WRI

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

71V2556SA133BG8

128K x 36 3.3V Synchronous ZBT™ SRAMs 2.5V I/O, Burst Counter Pipelined Outputs

Features ◆128Kx36memoryconfigurations ◆Supportshighperformancesystemspeed-166MHz (3.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(READ/WRI

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

71V2556SA133BGI

128K x 36 3.3V Synchronous ZBT™ SRAMs 2.5V I/O, Burst Counter Pipelined Outputs

Features ◆128Kx36memoryconfigurations ◆Supportshighperformancesystemspeed-166MHz (3.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(READ/WRI

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

71V2556SA133BGI8

128K x 36 3.3V Synchronous ZBT™ SRAMs 2.5V I/O, Burst Counter Pipelined Outputs

Features ◆128Kx36memoryconfigurations ◆Supportshighperformancesystemspeed-166MHz (3.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(READ/WRI

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

71V2556SA166BG

128K x 36 3.3V Synchronous ZBT™ SRAMs 2.5V I/O, Burst Counter Pipelined Outputs

Features ◆128Kx36memoryconfigurations ◆Supportshighperformancesystemspeed-166MHz (3.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(READ/WRI

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

71V2556SA166BG8

128K x 36 3.3V Synchronous ZBT™ SRAMs 2.5V I/O, Burst Counter Pipelined Outputs

Features ◆128Kx36memoryconfigurations ◆Supportshighperformancesystemspeed-166MHz (3.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(READ/WRI

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

71V2556S100BGG

3.3V Synchronous ZBT SRAMs

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

71V2556S100BGG8

3.3V Synchronous ZBT SRAMs

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

71V2556S100BGGI

3.3V Synchronous ZBT SRAMs

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

71V2556S100BGGI8

3.3V Synchronous ZBT SRAMs

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

71V2556S100PFG

3.3V Synchronous ZBT SRAMs

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

71V2556S100PFG8

3.3V Synchronous ZBT SRAMs

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

71V2556S100PFGI

3.3V Synchronous ZBT SRAMs

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

71V2556S100PFGI8

3.3V Synchronous ZBT SRAMs

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

71V2556S133BGG

3.3V Synchronous ZBT SRAMs

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

供应商型号品牌批号封装库存备注价格
IDT
RoHSCompliant
Tray
168
neworiginal
询价
IDT
23+
NA
10826
专做原装正品,假一罚百!
询价
IDT
1844+
BGA
6528
只做原装正品假一赔十为客户做到零风险!!
询价
Integrated Device Technology (
2022+
1
全新原装 货期两周
询价
IDT, Integrated Device Technol
21+
90-VFBGA
5280
进口原装!长期供应!绝对优势价格(诚信经营
询价
IDT, Integrated Device Technol
21+
119-PBGA(14x22)
56200
一级代理/放心采购
询价
RENESAS(瑞萨)/IDT
1921+
TQFP-100(14x14)
3575
向鸿仓库现货,优势绝对的原装!
询价
IDT
1931+
N/A
1186
加我qq或微信,了解更多详细信息,体验一站式购物
询价
RENESAS(瑞萨)/IDT
2117+
TQFP-100(14x14)
315000
72个/托盘一级代理专营品牌!原装正品,优势现货,长
询价
IDT
20+
BGA-119
1001
就找我吧!--邀您体验愉快问购元件!
询价
更多71V2556S供应商 更新时间2024-6-9 10:20:00