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71V424S10PHG	文件：72.68 Kbytes Page：9 Pages	3.3V CMOS Static RAM Description TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司
71V424S10PHG	文件：189.42 Kbytes Page：11 Pages	3.3V CMOS Static RAM 4 Meg (512K x 8-Bit) Features ◆512Kx8advancedhigh-speedCMOSStaticRAM ◆JEDECCenterPower/GNDpinoutforreducednoise ◆Equalaccessandcycletimes —CommercialandIndustrial:10/12/15ns ◆Single3.3Vpowersupply ◆OneChipSelectplusoneOutputEnablepin ◆Bidirectionaldatainputsandoutputs	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司
71V424S10PHG	文件：100 bytes Page：1 Pages	包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带封装/外壳：44-TSOP（0.400"，10.16mm 宽）类别：集成电路（IC）存储器描述：IC SRAM 4MBIT PARALLEL 44TSOP II	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司
71V424S10PHG8	文件：72.68 Kbytes Page：9 Pages	3.3V CMOS Static RAM Description TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司
71V424S10PHG8	文件：189.42 Kbytes Page：11 Pages	3.3V CMOS Static RAM 4 Meg (512K x 8-Bit) Features ◆512Kx8advancedhigh-speedCMOSStaticRAM ◆JEDECCenterPower/GNDpinoutforreducednoise ◆Equalaccessandcycletimes —CommercialandIndustrial:10/12/15ns ◆Single3.3Vpowersupply ◆OneChipSelectplusoneOutputEnablepin ◆Bidirectionaldatainputsandoutputs	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司
71V424S10PHGI	文件：72.68 Kbytes Page：9 Pages	3.3V CMOS Static RAM Description TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司
71V424S10PHGI	文件：189.42 Kbytes Page：11 Pages	3.3V CMOS Static RAM 4 Meg (512K x 8-Bit) Features ◆512Kx8advancedhigh-speedCMOSStaticRAM ◆JEDECCenterPower/GNDpinoutforreducednoise ◆Equalaccessandcycletimes —CommercialandIndustrial:10/12/15ns ◆Single3.3Vpowersupply ◆OneChipSelectplusoneOutputEnablepin ◆Bidirectionaldatainputsandoutputs	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司
71V424S10PHGI8	文件：72.68 Kbytes Page：9 Pages	3.3V CMOS Static RAM Description TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司
71V424S10PHGI8	文件：189.42 Kbytes Page：11 Pages	3.3V CMOS Static RAM 4 Meg (512K x 8-Bit) Features ◆512Kx8advancedhigh-speedCMOSStaticRAM ◆JEDECCenterPower/GNDpinoutforreducednoise ◆Equalaccessandcycletimes —CommercialandIndustrial:10/12/15ns ◆Single3.3Vpowersupply ◆OneChipSelectplusoneOutputEnablepin ◆Bidirectionaldatainputsandoutputs	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司
71V424S10PHGI	文件：100 bytes Page：1 Pages	包装：卷带（TR）封装/外壳：44-TSOP（0.400"，10.16mm 宽）类别：集成电路（IC）存储器描述：IC SRAM 4MBIT PARALLEL 44TSOP II	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司
71V424S10PHGI8	文件：100 bytes Page：1 Pages	包装：卷带（TR）封装/外壳：44-TSOP（0.400"，10.16mm 宽）类别：集成电路（IC）存储器描述：IC SRAM 4MBIT PARALLEL 44TSOP II	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司
71V424S10YG	文件：72.68 Kbytes Page：9 Pages	3.3VCMOSStaticRAM Description TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司
71V424S10YG	文件：189.42 Kbytes Page：11 Pages	3.3VCMOSStaticRAM4Meg(512Kx8-Bit) Features ◆512Kx8advancedhigh-speedCMOSStaticRAM ◆JEDECCenterPower/GNDpinoutforreducednoise ◆Equalaccessandcycletimes —CommercialandIndustrial:10/12/15ns ◆Single3.3Vpowersupply ◆OneChipSelectplusoneOutputEnablepin ◆Bidirectionaldatainputsandoutputs	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司
71V424S10YGI	文件：189.42 Kbytes Page：11 Pages	3.3VCMOSStaticRAM4Meg(512Kx8-Bit) Features ◆512Kx8advancedhigh-speedCMOSStaticRAM ◆JEDECCenterPower/GNDpinoutforreducednoise ◆Equalaccessandcycletimes —CommercialandIndustrial:10/12/15ns ◆Single3.3Vpowersupply ◆OneChipSelectplusoneOutputEnablepin ◆Bidirectionaldatainputsandoutputs	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司
71V424S10YGI	文件：72.68 Kbytes Page：9 Pages	3.3VCMOSStaticRAM Description TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司
IDT71V424S10PH	文件：19.28 Kbytes Page：9 Pages	3.3VCMOSSTATICRAM4MEG(512Kx8-BIT) DESCRIPTION: TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-he-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司
IDT71V424S10PHG	文件：19.28 Kbytes Page：9 Pages	3.3VCMOSSTATICRAM4MEG(512Kx8-BIT) DESCRIPTION: TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-he-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司
IDT71V424S10PHGI	文件：19.28 Kbytes Page：9 Pages	3.3VCMOSSTATICRAM4MEG(512Kx8-BIT) DESCRIPTION: TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-he-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司
IDT71V424S10PHI	文件：19.28 Kbytes Page：9 Pages	3.3VCMOSSTATICRAM4MEG(512Kx8-BIT) DESCRIPTION: TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-he-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司
IDT71V424S10Y	文件：19.28 Kbytes Page：9 Pages	3.3VCMOSSTATICRAM4MEG(512Kx8-BIT) DESCRIPTION: TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-he-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司

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产品属性

产品编号：
71V424S10PHG
制造商：
Renesas Electronics America Inc
类别：
集成电路（IC） > 存储器
包装：
卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带
存储器类型：
易失
存储器格式：
SRAM
技术：
SRAM - 异步
存储容量：
4Mb（512K x 8）
存储器接口：
并联
写周期时间 - 字，页：
10ns
电压 - 供电：
3V ~ 3.6V
工作温度：
0°C ~ 70°C（TA）
安装类型：
表面贴装型
封装/外壳：
44-TSOP（0.400"，10.16mm 宽）
供应商器件封装：
44-TSOP II
描述：
IC SRAM 4MBIT PARALLEL 44TSOP II

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市正纳电子有限公司	71V424S10PHG	Renesas(瑞萨)	23+	原厂封装	32078	10年以上分销商,原装进口件,服务型企业	询价
深圳市毅创辉电子科技有限公司	71V424S10PHG	RENESAS(瑞萨)	23+	44-TSOP (18.41L X 10.16W X 0.8	1350	全新、原装	询价
瀚佳科技(深圳)有限公司	71V424S10PHG	IDT, Integrated Device Technol	21+	44-TSOP II	56200	一级代理/放心采购	询价
深圳市艾宇欣科技有限公司	71V424S10PHG	IDT	1931+	N/A	804	加我qq或微信，了解更多详细信息,体验一站式购物	询价
深圳兆威电子有限公司	71V424S10PHG	RENESAS/瑞萨	23+	44-TSOP	90000	只做原厂渠道价格优势可提供技术支持	询价
艾睿国际（香港）有限公司	71V424S10PHG	RENESAS(瑞萨)/IDT	2117+	TSOPII-44	315000	135个/管一级代理专营品牌!原装正品,优势现货,长期	询价
深圳市科雨电子有限公司	71V424S10PHG	IDT	20+	SSOP-44	3854	就找我吧!--邀您体验愉快问购元件!	询价
深圳市博正芯科技有限公司	71V424S10PHG	Renesas Electronics America In	21+	NA	11200	正品专卖,进口原装深圳现货	询价
深圳市冠亿通科技有限公司	71V424S10PHG	Renesas	21+		25000	原厂原包深圳现货主打品牌假一赔百可开票!	询价
深圳市恒意法电子有限公司	71V424S10PHG	Renesas Electronics America In	21+	44-TSOP(0.400,10.16mm )	1040	正规渠道/品质保证/原装正品现货	询价

更多71V424S10PHG供应商更新时间2024-4-25 10:46:00

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