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71V424L10PHGI	文件：72.68 Kbytes Page：9 Pages	3.3V CMOS Static RAM Description TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司	IDT
71V424L10PHGI	文件：189.42 Kbytes Page：11 Pages	3.3V CMOS Static RAM 4 Meg (512K x 8-Bit) Features ◆512Kx8advancedhigh-speedCMOSStaticRAM ◆JEDECCenterPower/GNDpinoutforreducednoise ◆Equalaccessandcycletimes —CommercialandIndustrial:10/12/15ns ◆Single3.3Vpowersupply ◆OneChipSelectplusoneOutputEnablepin ◆Bidirectionaldatainputsandoutputs	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
71V424L10PHGI	文件：100 bytes Page：1 Pages	包装：卷带（TR）封装/外壳：44-TSOP（0.400"，10.16mm 宽）类别：集成电路（IC）存储器描述：IC SRAM 4MBIT PARALLEL 44TSOP II	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
71V424L10PHGI8	文件：72.68 Kbytes Page：9 Pages	3.3V CMOS Static RAM Description TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司	IDT
71V424L10PHGI8	文件：189.42 Kbytes Page：11 Pages	3.3V CMOS Static RAM 4 Meg (512K x 8-Bit) Features ◆512Kx8advancedhigh-speedCMOSStaticRAM ◆JEDECCenterPower/GNDpinoutforreducednoise ◆Equalaccessandcycletimes —CommercialandIndustrial:10/12/15ns ◆Single3.3Vpowersupply ◆OneChipSelectplusoneOutputEnablepin ◆Bidirectionaldatainputsandoutputs	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
71V424L10PHGI8	文件：100 bytes Page：1 Pages	包装：卷带（TR）封装/外壳：44-TSOP（0.400"，10.16mm 宽）类别：集成电路（IC）存储器描述：IC SRAM 4MBIT PARALLEL 44TSOP II	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
71V424L10PHG	文件：72.68 Kbytes Page：9 Pages	3.3VCMOSStaticRAM Description TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司	IDT
71V424L10PHG	文件：189.42 Kbytes Page：11 Pages	3.3VCMOSStaticRAM4Meg(512Kx8-Bit) Features ◆512Kx8advancedhigh-speedCMOSStaticRAM ◆JEDECCenterPower/GNDpinoutforreducednoise ◆Equalaccessandcycletimes —CommercialandIndustrial:10/12/15ns ◆Single3.3Vpowersupply ◆OneChipSelectplusoneOutputEnablepin ◆Bidirectionaldatainputsandoutputs	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
71V424L10YG	文件：189.42 Kbytes Page：11 Pages	3.3VCMOSStaticRAM4Meg(512Kx8-Bit) Features ◆512Kx8advancedhigh-speedCMOSStaticRAM ◆JEDECCenterPower/GNDpinoutforreducednoise ◆Equalaccessandcycletimes —CommercialandIndustrial:10/12/15ns ◆Single3.3Vpowersupply ◆OneChipSelectplusoneOutputEnablepin ◆Bidirectionaldatainputsandoutputs	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
71V424L10YG	文件：72.68 Kbytes Page：9 Pages	3.3VCMOSStaticRAM Description TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司	IDT
71V424L10YGI	文件：72.68 Kbytes Page：9 Pages	3.3VCMOSStaticRAM Description TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司	IDT
71V424L10YGI	文件：189.42 Kbytes Page：11 Pages	3.3VCMOSStaticRAM4Meg(512Kx8-Bit) Features ◆512Kx8advancedhigh-speedCMOSStaticRAM ◆JEDECCenterPower/GNDpinoutforreducednoise ◆Equalaccessandcycletimes —CommercialandIndustrial:10/12/15ns ◆Single3.3Vpowersupply ◆OneChipSelectplusoneOutputEnablepin ◆Bidirectionaldatainputsandoutputs	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
IDT71V424L10PH	文件：19.28 Kbytes Page：9 Pages	3.3VCMOSSTATICRAM4MEG(512Kx8-BIT) DESCRIPTION: TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-he-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司	IDT
IDT71V424L10PHG	文件：19.28 Kbytes Page：9 Pages	3.3VCMOSSTATICRAM4MEG(512Kx8-BIT) DESCRIPTION: TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-he-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司	IDT
IDT71V424L10PHGI	文件：19.28 Kbytes Page：9 Pages	3.3VCMOSSTATICRAM4MEG(512Kx8-BIT) DESCRIPTION: TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-he-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司	IDT
IDT71V424L10PHI	文件：19.28 Kbytes Page：9 Pages	3.3VCMOSSTATICRAM4MEG(512Kx8-BIT) DESCRIPTION: TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-he-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司	IDT
IDT71V424L10Y	文件：19.28 Kbytes Page：9 Pages	3.3VCMOSSTATICRAM4MEG(512Kx8-BIT) DESCRIPTION: TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-he-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司	IDT
IDT71V424L10YG	文件：19.28 Kbytes Page：9 Pages	3.3VCMOSSTATICRAM4MEG(512Kx8-BIT) DESCRIPTION: TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-he-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司	IDT
IDT71V424L10YGI	文件：19.28 Kbytes Page：9 Pages	3.3VCMOSSTATICRAM4MEG(512Kx8-BIT) DESCRIPTION: TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-he-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司	IDT
IDT71V424L10YI	文件：19.28 Kbytes Page：9 Pages	3.3VCMOSSTATICRAM4MEG(512Kx8-BIT) DESCRIPTION: TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-he-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司	IDT

产品属性

产品编号：
71V424L10PHGI
制造商：
Renesas Electronics America Inc
类别：
集成电路（IC） > 存储器
包装：
卷带（TR）
存储器类型：
易失
存储器格式：
SRAM
技术：
SRAM - 异步
存储容量：
4Mb（512K x 8）
存储器接口：
并联
写周期时间 - 字，页：
10ns
电压 - 供电：
3V ~ 3.6V
工作温度：
-40°C ~ 85°C（TA）
安装类型：
表面贴装型
封装/外壳：
44-TSOP（0.400"，10.16mm 宽）
供应商器件封装：
44-TSOP II
描述：
IC SRAM 4MBIT PARALLEL 44TSOP II

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市鹏顺微电子科技有限公司	71V424L10PHGI	RENESAS(瑞萨)/IDT	2022+原装正品	TSOPII-44	18000	支持工厂BOM表配单公司只做原装正品货	询价
深圳市毅创辉电子科技有限公司	71V424L10PHGI	RENESAS(瑞萨)	23+	44-TSOP (18.41L X 10.16W X 0.8	1350	全新、原装	询价
瀚佳科技(深圳)有限公司	71V424L10PHGI	IDT, Integrated Device Technol	21+	44-TSOP II	56200	一级代理/放心采购	询价
深圳市艾宇欣科技有限公司	71V424L10PHGI	IDT	1931+	N/A	1186	加我qq或微信，了解更多详细信息,体验一站式购物	询价
艾睿国际（香港）有限公司	71V424L10PHGI	RENESAS(瑞萨)/IDT	2117+	TSOPII-44	315000	135个/管一级代理专营品牌!原装正品,优势现货,长期	询价
深圳市科雨电子有限公司	71V424L10PHGI	IDT	20+	TSOP-44	130	就找我吧!--邀您体验愉快问购元件!	询价
深圳市冠亿通科技有限公司	71V424L10PHGI	IDT,	21+		25000	原厂原包深圳现货主打品牌假一赔百可开票!	询价
讯运(深圳/上海)电子有限公司	71V424L10PHGI	RENESAS(瑞萨)/IDT	2021+	TSOPII-44	499		询价
万三科技(深圳)有限公司	71V424L10PHGI	RENESAS(瑞萨电子)	22+	NA	500000	万三科技,秉承原装,购芯无忧	询价
深圳市易讯博科技有限公司	71V424L10PHGI	IDT	22+	NA	1186	加我QQ或微信咨询更多详细信息,	询价

更多71V424L10PHGI供应商更新时间2024-4-29 15:00:00

产品属性

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