首页 >71T75602S100BGG>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
71T75602S100BGG | 512K x 36, 1M x 18 2.5V Synchronous ZBT™ SRAMs 2.5V I/O, Burst Counter Pipelined Outputs Features ◆512Kx36,1Mx18memoryconfigurations ◆Supportshighperformancesystemspeed-200MHz (3.2nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | |
71T75602S100BGG | 2.5V Synchronous ZBT SRAMs I/O, Burst Counter Pipelined Outputs | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT | |
71T75602S100BGG | 包装：托盘 封装/外壳：119-BGA 类别：集成电路（IC） 存储器 描述：IC SRAM 18MBIT PARALLEL 119PBGA | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | |
512K x 36, 1M x 18 2.5V Synchronous ZBT™ SRAMs 2.5V I/O, Burst Counter Pipelined Outputs Features ◆512Kx36,1Mx18memoryconfigurations ◆Supportshighperformancesystemspeed-200MHz (3.2nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
512K x 36, 1M x 18 2.5V Synchronous ZBT™ SRAMs 2.5V I/O, Burst Counter Pipelined Outputs Features ◆512Kx36,1Mx18memoryconfigurations ◆Supportshighperformancesystemspeed-200MHz (3.2nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
512K x 36, 1M x 18 2.5V Synchronous ZBT™ SRAMs 2.5V I/O, Burst Counter Pipelined Outputs Features ◆512Kx36,1Mx18memoryconfigurations ◆Supportshighperformancesystemspeed-200MHz (3.2nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
2.5V Synchronous ZBT SRAMs I/O, Burst Counter Pipelined Outputs | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT | ||
2.5V Synchronous ZBT SRAMs I/O, Burst Counter Pipelined Outputs | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT | ||
2.5V Synchronous ZBT SRAMs I/O, Burst Counter Pipelined Outputs | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT | ||
包装：卷带（TR） 封装/外壳：119-BGA 类别：集成电路（IC） 存储器 描述：IC SRAM 18MBIT PARALLEL 119PBGA | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
包装：托盘 封装/外壳：119-BGA 类别：集成电路（IC） 存储器 描述：IC SRAM 18MBIT PARALLEL 119PBGA | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
2.5VSynchronousZBTSRAMsI/O,BurstCounterPipelinedOutputs | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT | ||
512Kx36,1Mx182.5VSynchronousZBT™SRAMs2.5VI/O,BurstCounterPipelinedOutputs Features ◆512Kx36,1Mx18memoryconfigurations ◆Supportshighperformancesystemspeed-200MHz (3.2nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
512Kx36,1Mx182.5VSynchronousZBT™SRAMs2.5VI/O,BurstCounterPipelinedOutputs Features ◆512Kx36,1Mx18memoryconfigurations ◆Supportshighperformancesystemspeed-200MHz (3.2nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
2.5VSynchronousZBTSRAMsI/O,BurstCounterPipelinedOutputs | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT | ||
512Kx36,1Mx182.5VSynchronousZBT??SRAMs2.5VI/O,BurstCounterPipelinedOutputs | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT | ||
512Kx36,1Mx182.5VSynchronousZBT??SRAMs2.5VI/O,BurstCounterPipelinedOutputs | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT | ||
512Kx36,1Mx182.5VSynchronousZBT??SRAMs2.5VI/O,BurstCounterPipelinedOutputs | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT | ||
512Kx36,1Mx182.5VSynchronousZBT??SRAMs2.5VI/O,BurstCounterPipelinedOutputs | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT |
产品属性
- 产品编号：
71T75602S100BGG
- 制造商：
Renesas Electronics America Inc
- 类别：
集成电路（IC） > 存储器
- 包装：
托盘
- 存储器类型：
易失
- 存储器格式：
SRAM
- 技术：
SRAM - 同步，SDR（ZBT）
- 存储容量：
18Mb（512K x 36）
- 存储器接口：
并联
- 电压 - 供电：
2.375V ~ 2.625V
- 工作温度：
0°C ~ 70°C（TA）
- 安装类型：
表面贴装型
- 封装/外壳：
119-BGA
- 供应商器件封装：
119-PBGA（14x22）
- 描述：
IC SRAM 18MBIT PARALLEL 119PBGA
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS(瑞萨)/IDT |
2022+原装正品 |
PBGA-119(14x22) |
18000 |
支持工厂BOM表配单 公司只做原装正品货 |
询价 | ||
IDT, Integrated Device Technol |
21+ |
165-TBGA |
5280 |
进口原装!长期供应!绝对优势价格(诚信经营 |
询价 | ||
IDT, Integrated Device Technol |
21+ |
119-PBGA(14x22) |
56200 |
一级代理/放心采购 |
询价 | ||
RENESAS(瑞萨)/IDT |
1921+ |
PBGA-119(14x22) |
3575 |
向鸿仓库现货,优势绝对的原装! |
询价 | ||
IDT |
1931+ |
N/A |
1186 |
加我qq或微信，了解更多详细信息,体验一站式购物 |
询价 | ||
RENESAS(瑞萨)/IDT |
2117+ |
PBGA-119(14x22) |
315000 |
84个/托盘一级代理专营品牌!原装正品,优势现货,长 |
询价 | ||
IDT |
20+ |
BGA-119 |
84 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
RENESAS(瑞萨电子) |
22+ |
NA |
500000 |
万三科技,秉承原装,购芯无忧 |
询价 | ||
IDT |
22+ |
NA |
1186 |
加我QQ或微信咨询更多详细信息, |
询价 | ||
IDT, Integrated Device Techno |
2022+ |
119-PBGA(14x22) |
7300 |
原装现货 |
询价 |
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