Features

◆ 512K x 36, 1M x 18 memory configurations

◆ Supports high performance system speed - 200 MHz

(3.2 ns Clock-to-Data Access)

◆ ZBTTM Feature - No dead cycles between write and read

cycles

◆ Internally synchronized output buffer enable eliminates the

need to control OE

◆ Single R/W (READ/WRITE) control pin

◆ Positive clock-edge triggered address, data, and control

signal registers for fully pipelined applications

◆ 4-word burst capability (interleaved or linear)

◆ Individual byte write (BW1 - BW4) control (May tie active)

◆ Three chip enables for simple depth expansion

◆ 2.5V power supply (±5)

◆ 2.5V I/O Supply (VDDQ)

◆ Power down controlled by ZZ input

◆ Boundary Scan JTAG Interface (IEEE 1149.1 Compliant)

◆ Packaged in a JEDEC standard 100-pin plastic thin quad

flatpack (TQFP), 119 ball grid array (BGA)

◆ Industrial temperature range (–40°C to +85°C) is available

for selected speeds

◆ Green parts available, see ordering information

71T75602S100BGGI属于集成电路（IC） > 存储器。瑞萨科技有限公司制造生产的71T75602S100BGGI存储器存储器是集成电路上用作数据存储设备的半导体器件。这些器件分为非易失性或易失性两种，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、闪存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。这些器件的存储容量为 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、单线、SPI、UFS、Xccela 总线和 1-线。