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零件编号	下载订购	功能描述/丝印	制造商上传企业	LOGO
71V124SA15TYG	文件：192.06 Kbytes Page：9 Pages	3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout Features ◆128Kx8advancedhigh-speedCMOSstaticRAM ◆JEDECrevolutionarypinout(centerpower/GND)for reducednoise ◆Equalaccessandcycletimes –Commercial:10/12/15ns –Industrial:10/12/15ns ◆OneChipSelectplusoneOutputEnablepin ◆InputsandoutputsareLVTTL-compatible	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司	RENESAS
71V124SA15TYGI	文件：192.06 Kbytes Page：9 Pages	3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout Features ◆128Kx8advancedhigh-speedCMOSstaticRAM ◆JEDECrevolutionarypinout(centerpower/GND)for reducednoise ◆Equalaccessandcycletimes –Commercial:10/12/15ns –Industrial:10/12/15ns ◆OneChipSelectplusoneOutputEnablepin ◆InputsandoutputsareLVTTL-compatible	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司	RENESAS
71V124SA15YG	文件：192.06 Kbytes Page：9 Pages	3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout Features ◆128Kx8advancedhigh-speedCMOSstaticRAM ◆JEDECrevolutionarypinout(centerpower/GND)for reducednoise ◆Equalaccessandcycletimes –Commercial:10/12/15ns –Industrial:10/12/15ns ◆OneChipSelectplusoneOutputEnablepin ◆InputsandoutputsareLVTTL-compatible	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司	RENESAS
71V124SA15YGI	文件：192.06 Kbytes Page：9 Pages	3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout Features ◆128Kx8advancedhigh-speedCMOSstaticRAM ◆JEDECrevolutionarypinout(centerpower/GND)for reducednoise ◆Equalaccessandcycletimes –Commercial:10/12/15ns –Industrial:10/12/15ns ◆OneChipSelectplusoneOutputEnablepin ◆InputsandoutputsareLVTTL-compatible	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司	RENESAS
IDT71V124SA15	文件：81.33 Kbytes Page：8 Pages	3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout Description TheIDT71V124isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor	IDT Integrated Device Technology, Inc.	IDT
IDT71V124SA15PH	文件：81.33 Kbytes Page：8 Pages	3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout Description TheIDT71V124isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor	IDT Integrated Device Technology, Inc.	IDT
IDT71V124SA15PHI	文件：81.33 Kbytes Page：8 Pages	3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout Description TheIDT71V124isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor	IDT Integrated Device Technology, Inc.	IDT
IDT71V124SA15TY	文件：81.33 Kbytes Page：8 Pages	3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout Description TheIDT71V124isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor	IDT Integrated Device Technology, Inc.	IDT
IDT71V124SA15TYI	文件：81.33 Kbytes Page：8 Pages	3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout Description TheIDT71V124isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor	IDT Integrated Device Technology, Inc.	IDT
IDT71V124SA15Y	文件：81.33 Kbytes Page：8 Pages	3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout Description TheIDT71V124isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor	IDT Integrated Device Technology, Inc.	IDT

详细参数

型号：
71V124SA15PHI
制造商：
Integrated Device Technology Inc
功能描述：
SRAM Chip Async Single 3.3V 1M-Bit 128K x 8 15ns 32-Pin TSOP-II Tray
制造商：
IDT from Components Direct
功能描述：
71V124SA15PHI, 1MBIT SRAM CHIP ASYNC SINGLE 3.3V 128K X 8 15 - Rail/Tube
制造商：
IDT
功能描述：
IDT 71V124SA15PHI, 1Mbit SRAM Chip Async Single 3.3V 128K x 8 15ns 32-Pin TSOP-II Tray

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市冠亿通科技有限公司	71V124SA15TY	IDT,	21+		25000	原厂原包深圳现货主打品牌假一赔百可开票!	询价
现代芯城（深圳）科技有限公司	71V124SA15TY		24+	N/A	56000	一级代理-主营优势-实惠价格-不悔选择	询价
上海市鑫鸿达电子	71V124SA15TYG	Integrated Device Technology (	2022+		1	全新原装货期两周	询价
瀚佳科技(深圳)有限公司	71V124SA15TYG	IDT, Integrated Device Technol	24+	32-SOJ	56200	一级代理/放心采购	询价
深圳市艾宇欣科技有限公司	71V124SA15TYG	IDT	1931+	N/A	1186	加我qq或微信，了解更多详细信息,体验一站式购物	询价
艾睿国际（香港）有限公司	71V124SA15TYG	RENESAS(瑞萨)/IDT	2447	SOJ-32	315000	23个/管一级代理专营品牌!原装正品,优势现货,长期	询价
深圳市科雨电子有限公司	71V124SA15TYG	IDT	20+	32-SOP	345	就找我吧!--邀您体验愉快问购元件!	询价
万三科技(深圳)有限公司	71V124SA15TYG	RENESAS(瑞萨电子)	22+	NA	500000	万三科技,秉承原装,购芯无忧	询价
深圳市易讯博科技有限公司	71V124SA15TYG	IDT	22+	NA	1186	加我QQ或微信咨询更多详细信息,	询价
深圳市鹏顺微电子科技有限公司	71V124SA15TYG	Integrated Device Technology	2022+	原厂原包装	8600	全新原装支持表配单中国著名电子元器件独立分销	询价

更多71V124SA15PHI供应商更新时间2025-5-24 16:30:00

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