6.2 Amps, 600/650 Volts N-CHANNEL MOSFET

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6.2A, 600V N-CHANNEL POWER MOSFET

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6.2A, 600V N-CHANNEL POWER MOSFET

The UTC 6N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching powe • RDS(ON) = 1.5Ω @VGS = 10V \n• Low reverse transfer Capacitance ( CRSS = typical 10pF ) \n• Avalanche energy tested \n• Improved dv/dt capability, high ruggedness;

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丝印：6N60；Package：TO-251；N-CHANNEL ENHANCEMENT MODE MOSFET

FEATURES • Low Crss • Low gate charge • Fast switching • Improved ESD capability • Improved dv/dt capability • 100% avalanche energy test

文件：1.133 Mbytes 页数：11 Pages

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丝印：6N60；Package：TO-252；N-CHANNEL ENHANCEMENT MODE MOSFET

FEATURES • Low Crss • Low gate charge • Fast switching • Improved ESD capability • Improved dv/dt capability • 100% avalanche energy test

文件：1.133 Mbytes 页数：11 Pages

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丝印：6N60；Package：TO-220；N-CHANNEL ENHANCEMENT MODE MOSFET

FEATURES • Low Crss • Low gate charge • Fast switching • Improved ESD capability • Improved dv/dt capability • 100% avalanche energy test

文件：1.133 Mbytes 页数：11 Pages

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丽正国际

丝印：6N60；Package：TO-220F；N-CHANNEL ENHANCEMENT MODE MOSFET

FEATURES • Low Crss • Low gate charge • Fast switching • Improved ESD capability • Improved dv/dt capability • 100% avalanche energy test

文件：1.133 Mbytes 页数：11 Pages

RECTRON

丽正国际

6.2 Amps, 600/650 Volts N-CHANNEL MOSFET

 DESCRIPTION The UTC 6N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications

文件：141.59 Kbytes 页数：7 Pages

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6.2 Amps, 600/650 Volts N-CHANNEL MOSFET

 DESCRIPTION The UTC 6N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications

文件：141.59 Kbytes 页数：7 Pages

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6.2 Amps, 600/650 Volts N-CHANNEL MOSFET

 DESCRIPTION The UTC 6N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications

文件：141.59 Kbytes 页数：7 Pages

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友顺