丝印：6N60；Package：TO-252；N-CHANNEL ENHANCEMENT MODE MOSFET

FEATURES • Low Crss • Low gate charge • Fast switching • Improved ESD capability • Improved dv/dt capability • 100% avalanche energy test

文件：1.133 Mbytes 页数：11 Pages

RECTRON

丽正国际

MOSFET

Rectron

丽正国际

N-CHANNEL ENHANCEMENT MODE MOSFET

FEATURES • Low Crss • Low gate charge • Fast switching • Improved ESD capability • Improved dv/dt capability • 100% avalanche energy test

文件：1.133 Mbytes 页数：11 Pages

RECTRON

丽正国际

Ultra-Fast IGBT

General Description Fairchilds UF series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UF series is designed for applications such as motor control and general inverters where high speed switching is a required feature. Features • High speed swi

文件：510.16 Kbytes 页数：7 Pages

FAIRCHILD

仙童半导体

Ultra-Fast IGBT

General Description Fairchilds UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UFD series is designed for applications such as motor control and general inverters where high speed switching is a required feature. Features • High speed s

文件：570.21 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体