6.2 Amps, 600/650 Volts N-CHANNEL MOSFET

 DESCRIPTION The UTC 6N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications

文件：141.59 Kbytes 页数：7 Pages

UTC

友顺

Avalanche Energy Specified

DESCRITION · Designed for high efficiency switch mode power supply. FEATURES · Drain Current –ID= 6A@ TC=25℃ · Drain Source Voltage-: VDSS= 600V(Min) · Static Drain-Source On-Resistance : RDS(on) = 1.2Ω (Max) · Avalanche Energy Specified · Fast Switching · Simple Drive Requirements

文件：157.55 Kbytes 页数：2 Pages

ISC

无锡固电

6.2A, 600V N-CHANNEL POWER MOSFET

 DESCRIPTION The UTC 6N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applicati

文件：336.17 Kbytes 页数：7 Pages

SYC

N-Channel 600V (D-S) Power MOSFET

文件：1.0803 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

N-CHANNEL POWER MOSFET

文件：460.3 Kbytes 页数：6 Pages

ZSELEC

淄博圣诺

N-CHANNEL MOSFET

文件：219.8 Kbytes 页数：6 Pages

ARTSCHIP

600V N-Channel Power MOSFET

文件：1.88521 Mbytes 页数：8 Pages

DYELEC

迪一电子

N-Channel Power MOSFET

文件：486.21 Kbytes 页数：10 Pages

NELLSEMI

尼尔半导体

6A mps,600 Volts N-CHANNEL MOSFET

文件：193.16 Kbytes 页数：2 Pages

CHONGQING

平伟实业

N-CHANNEL POWER MOSFET

文件：2.10805 Mbytes 页数：7 Pages

SUNMATE

森美特