6.2 Amps, 600/650 Volts N-CHANNEL MOSFET

 DESCRIPTION The UTC 6N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications

文件：141.59 Kbytes 页数：7 Pages

UTC

友顺

600V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchildís proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching p

文件：911.62 Kbytes 页数：10 Pages

FAIRCHILD

仙童半导体

N-CHANNEL SILICON POWER MOSFET

Features Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche durability Applica

文件：561.49 Kbytes 页数：5 Pages

FUJI

富士通

6.2 Amps, 600/650 Volts N-CHANNEL MOSFET

 DESCRIPTION The UTC 6N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications

文件：141.59 Kbytes 页数：7 Pages

UTC

友顺

6.2 Amps, 600/650 Volts N-CHANNEL MOSFET

 DESCRIPTION The UTC 6N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications

文件：141.59 Kbytes 页数：7 Pages

UTC

友顺

6.2 Amps, 600/650 Volts N-CHANNEL MOSFET

 DESCRIPTION The UTC 6N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications

文件：141.59 Kbytes 页数：7 Pages

UTC

友顺

6.2 Amps, 600/650 Volts N-CHANNEL MOSFET

 DESCRIPTION The UTC 6N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications

文件：141.59 Kbytes 页数：7 Pages

UTC

友顺

N-channel 600 V, 1.00 typ., 5.5 A MDmesh M2 Power MOSFET in an SOT223-2 package

Features • Extremely low gate charge • Excellent output capacitance (Coss) profile • 100% avalanche tested • Zener-protected Description This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the de

文件：262.57 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

6.2A, 600V N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 6N60Z is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in swi

文件：200.41 Kbytes 页数：6 Pages

UTC

友顺

6.2A, 600V N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 6N60Z is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in swi

文件：200.41 Kbytes 页数：6 Pages

UTC

友顺