丝印：6N60AMJ；Package：TO-251；6A 600V N-channel enhanced field effect transistor

文件：1.12341 Mbytes 页数：7 Pages

YFWDIODE

佑风微

丝印：6N60AD；Package：TO-252；6A 600V N-channel enhanced field effect transistor

文件：1.12341 Mbytes 页数：7 Pages

YFWDIODE

佑风微

6.2A, 600V N-CHANNEL POWER MOSFET

The UTC 6N60K-MT is a high voltage power MOSFET and isdesigned to have better characteristics, such as fast switchingtime, low gate charge, low on-state resistance and have a highrugged avalanche characteristics. This power MOSFET is usuallyused at high speed switching applications in switching powe • RDS(ON) < 1.4Ω @VGS = 10V\n• Avalanche energy tested\n• Improved dv/dt capability, high ruggedness;

UTC

友顺

6A, 600V  N-CHANNEL POWER MOSFET

The UTC 6N60K-MTQ is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications at power supplies, PWM mot RDS(ON) < 1.8Ω @ VGS = 10 V, ID = 3 AFast Switching CapabilityImproved dv/dt Capability, High Ruggedness;

UTC

友顺