丝印：6G；Package：DFN2020MD-6；30 V, N-channel Trench MOSFET

1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Extended temperature range Tj = 175 °C • Small and leadle

文件：331.4 Kbytes 页数：15 Pages

NEXPERIA

安世

丝印：6G；Package：SOT666；PNP/PNP resistor-equipped transistors; R1 = 2.2 kW, R2 = 2.2 kW

1.1 General description PNP/PNP resistor-equipped transistors 1.2 Features n Built-in bias resistors n Simplifies circuit design n Reduces component count n Reduces pick and place cost 1.3 Applications n Low current peripheral driver n Control of IC inputs n Replacement of general-purpos

文件：71.41 Kbytes 页数：11 Pages

NEXPERIA

安世

丝印：6G；Package：PG-TSOP6-6-9；High Precision Hall-Effect Switch with Direction Detection

Features •2.7 V to 24 V supply voltage operation •Operation from unregulated power supply •High sensitivity and high stability of the magnetic switching points •High resistance to mechanical stress by Active Error Compensation •Reverse battery protection (-18 V) •Superior temperature stabi

文件：1.19444 Mbytes 页数：17 Pages

INFINEON

英飞凌

丝印：6G；Package：SOT-23；NPN General Purpose Amplifier

文件：1.05939 Mbytes 页数：2 Pages

LUGUANG

鲁光电子

丝印：6G；Package：SOT-323；Bias Resistor Transistors

文件：453.62 Kbytes 页数：12 Pages

FS

丝印：6G；Package：WLCSP；DP3T USB Type C Audio andUART Analog Switch with OVP

文件：285.91 Kbytes 页数：11 Pages

ONSEMI

安森美半导体

丝印：6G；Package：SOT-323；Bias Resistor Transistor

文件：174.43 Kbytes 页数：12 Pages

LRC

乐山无线电

丝印：6G；Package：X2SON；1-關A Ultralow IQ, 200-mA, Low-Dropout Regulator in a Small-Size Package

文件：4.17401 Mbytes 页数：52 Pages

TI

德州仪器

丝印：6G；Package：X2SON；TPS7A05 1-關A Ultralow IQ, 200-mA, Low-Dropout Regulator in a Small-Size Package

文件：4.1841 Mbytes 页数：55 Pages

TI

德州仪器

丝印：6G；Package：X2SON；TPS7A05 1-關A Ultralow IQ, 200-mA, Low-Dropout Regulator in a Small-Size Package

文件：4.19299 Mbytes 页数：55 Pages

TI

德州仪器