Non-Insulated Ring Terminals

文件：4.15916 Mbytes 页数：38 Pages

HOFFMANPRODUCTS

650V N-Channel MOSFET

General Description This Power MOSFET is produced using Msemitek‘s advanced Superjunction MOSFET technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanch

文件：997.26 Kbytes 页数：9 Pages

MSEMITEK

美浦森半导体

650V Super-junction Power MOSFET

Description 650V Super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs，designed accordingtotheSJprinciple. The Multi-EPI SJ MOSFET provide an extremely low switching, communication and conduction losses devicewithhighest robustness m

文件：597.57 Kbytes 页数：8 Pages

WUMC

紫光国微

650V Super-Junction Power MOSFET

DESCRIPTION 650V super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs， designed according to the SJ principle. The SJ MOSFET is a price-performance optimized product enabling to target cost sensitive applications in Consumer and L

文件：491.05 Kbytes 页数：8 Pages

WUMC

紫光国微

20A竊?50V N-CHANNEL MOSFET

文件：450.41 Kbytes 页数：6 Pages

KIA

可易亚半导体

丝印：65R110D2；Package：PG-LSON-8；CoolGaN™ Gen2 650 V CoolGaN™ enhancement‑mode Power Transistor

Features • Enhancement mode transistor ‑ Normally OFF switch • Ultra fast switching • No reverse‑recovery charge • Capable of reverse conduction • Low gate charge, low output charge • Superior commutation ruggedness • ESD (HBM/CDM) JEDEC standards Benefits • Improves system efficiency

文件：811.43 Kbytes 页数：10 Pages

INFINEON

英飞凌

丝印：65R140D2；Package：PG-LSON-8；CoolGaN™ Gen2 650 V CoolGaN™ enhancement‑mode Power Transistor

Features • Enhancement mode transistor ‑ Normally OFF switch • Ultra fast switching • No reverse‑recovery charge • Capable of reverse conduction • Low gate charge, low output charge • Superior commutation ruggedness • ESD (HBM/CDM) JEDEC standards Benefits • Improves system efficiency

文件：1.06747 Mbytes 页数：14 Pages

INFINEON

英飞凌

丝印：65R140D；Package：PG-TSON-8；CoolGaN™ Gen2 650 V CoolGaN™ enhancement‑mode Power Transistor

Features • Enhancement mode transistor ‑ Normally OFF switch • Ultra fast switching • No reverse‑recovery charge • Capable of reverse conduction • Low gate charge, low output charge • Superior commutation ruggedness • ESD (HBM/CDM) JEDEC standards Benefits • Improves system efficiency

文件：1.07413 Mbytes 页数：14 Pages

INFINEON

英飞凌

丝印：65R110D2；Package：PG-HDSOP-16；CoolGaN™ Gen2 650 V CoolGaN™ enhancement‑mode Power Transistor

Features • Enhancement mode transistor ‑ Normally OFF switch • Ultra fast switching • No reverse‑recovery charge • Capable of reverse conduction • Low gate charge, low output charge • Superior commutation ruggedness • ESD (HBM/CDM) JEDEC standards Benefits • Improves system efficiency

文件：1.062 Mbytes 页数：12 Pages

INFINEON

英飞凌

丝印：65R140D2；Package：PG-HSOF-8；CoolGaN™ Gen2 650 V CoolGaN™ enhancement‑mode Power Transistor

Features • Enhancement mode transistor ‑ Normally OFF switch • Ultra fast switching • No reverse‑recovery charge • Capable of reverse conduction • Low gate charge, low output charge • Superior commutation ruggedness • ESD (HBM/CDM) JEDEC standards Benefits • Improves system efficiency

文件：1.45126 Mbytes 页数：16 Pages

INFINEON

英飞凌