丝印：65R140D2；Package：PG-LSON-8；CoolGaN™ Gen2 650 V CoolGaN™ enhancement‑mode Power Transistor

Features • Enhancement mode transistor ‑ Normally OFF switch • Ultra fast switching • No reverse‑recovery charge • Capable of reverse conduction • Low gate charge, low output charge • Superior commutation ruggedness • ESD (HBM/CDM) JEDEC standards Benefits • Improves system efficiency

文件：1.06747 Mbytes 页数：14 Pages

INFINEON

英飞凌

CoolGaN ™晶体管 650 V G5

• 650 V e-mode power transistor\n• Ultrafast switching\n• No reverse-recovery charge\n• Capable of reverse conduction\n• Low gate charge, low output charge\n• Superior commutation ruggedness\n• Low dynamic RDS(on)\n• High ESD robustness: 2 kV HBM - 1 kV CDM\n• Bottom-side cooled package\n• JEDEC qua;

Infineon

英飞凌

CoolGaN™ Gen2 650 V CoolGaN™ enhancement‑mode Power Transistor

Features • Enhancement mode transistor ‑ Normally OFF switch • Ultra fast switching • No reverse‑recovery charge • Capable of reverse conduction • Low gate charge, low output charge • Superior commutation ruggedness • ESD (HBM/CDM) JEDEC standards Benefits • Improves system efficiency

文件：1.07413 Mbytes 页数：14 Pages

INFINEON

英飞凌

CoolGaN™ Gen2 650 V CoolGaN™ enhancement‑mode Power Transistor

Features • Enhancement mode transistor ‑ Normally OFF switch • Ultra fast switching • No reverse‑recovery charge • Capable of reverse conduction • Low gate charge, low output charge • Superior commutation ruggedness • ESD (HBM/CDM) JEDEC standards Benefits • Improves system efficiency

文件：1.45126 Mbytes 页数：16 Pages

INFINEON

英飞凌