丝印：60R190D1；Package：PG-TSON-8-6；600V CoolGaN™ enhancement-mode Power Transistor

Features  Enhancement mode transistor – Normally OFF switch  Ultra fast switching  No reverse-recovery charge  Capable of reverse conduction  Low gate charge, low output charge  Superior commutation ruggedness  Qualified for industrial applications according to JEDEC Standards (JESD

文件：498.44 Kbytes 页数：16 Pages

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600 V CoolGaN ™ e-mode 功率晶体管，实现极致效率和可靠性

CoolGaN ™ 600 V 系列经过全面的 GaN 定制认证，远远超出现有标准，是最高应用可靠性的完美选择。 • E-mode HEMT – 通常处于关闭状态\n• 无反向恢复电荷\n• 低栅极电荷、低输出电荷\n• 符合 JEDEC 标准 (JESD47、JESD22)\n• 底部冷却;

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英飞凌

600V CoolGaN™ enhancement-mode Power Transistor

Features  Enhancement mode transistor – Normally OFF switch  Ultra fast switching  No reverse-recovery charge  Capable of reverse conduction  Low gate charge, low output charge  Superior commutation ruggedness  Qualified for industrial applications according to JEDEC Standards (JESD

文件：544.95 Kbytes 页数：16 Pages

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600V CoolGaN??enhancement-mode Power Transistor

Features  Enhancement mode transistor – Normally OFF switch  Ultra fast switching  No reverse-recovery charge  Capable of reverse conduction  Low gate charge, low output charge  Superior commutation ruggedness  Qualified for standard grade applications according to JEDEC standards

文件：570.17 Kbytes 页数：17 Pages

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