IGLR65R140D2

丝印：65R140D；Package：PG-TSON-8；CoolGaN™ Gen2 650 V CoolGaN™ enhancement‑mode Power Transistor

Features •Enhancementmodetransistor‑NormallyOFFswitch •Ultrafastswitching •Noreverse‑recoverycharge •Capableofreverseconduction •Lowgatecharge,lowoutputcharge •Superiorcommutationruggedness •ESD(HBM/CDM)JEDECstandards Benefits •Improvessystemefficiency

IGLR65R140D2

CoolGaN™ Transistor 650 V G5; • 650 V e-mode power transistor\n• Ultrafast switching\n• No reverse-recovery charge\n• Capable of reverse conduction\n• Low gate charge, low output charge\n• Superior commutation ruggedness\n• Low dynamic RDS(on)\n• High ESD robustness: 2 kV HBM - 1 kV CDM\n• Bottom-side cooled package\n• JEDEC qualified (JESD47, JESD22)\n\n优势:\n• Supports high operating frequency\n• Enables highest system efficiency\n• Enables ultrahigh power density designs\n• Supports BOM cost savings\n;

IGLD65R140D2

CoolGaN™Gen2650VCoolGaN™enhancement‑modePowerTransistor

Features •Enhancementmodetransistor‑NormallyOFFswitch •Ultrafastswitching •Noreverse‑recoverycharge •Capableofreverseconduction •Lowgatecharge,lowoutputcharge •Superiorcommutationruggedness •ESD(HBM/CDM)JEDECstandards Benefits •Improvessystemefficiency

IGT65R140D2

CoolGaN™Gen2650VCoolGaN™enhancement‑modePowerTransistor

Features •Enhancementmodetransistor‑NormallyOFFswitch •Ultrafastswitching •Noreverse‑recoverycharge •Capableofreverseconduction •Lowgatecharge,lowoutputcharge •Superiorcommutationruggedness •ESD(HBM/CDM)JEDECstandards Benefits •Improvessystemefficiency