丝印：65R107M1；Package：PG-HSOF-8；MOSFET 650 V CoolSiCª M1 SiC Trench Power Device

Features • Optimized switching behavior at higher currents • Commutation robust fast body diode with low Qf • Superior gate oxide reliability • Tj,max=175°C and excellent thermal behavior • Lower RDS(on) and pulse current dependency on temperature • Increased avalanche capability • Compatib

文件：1.45982 Mbytes 页数：15 Pages

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丝印：65R163M1；Package：PG-HSOF-8；MOSFET 650 V CoolSiCª M1 SiC Trench Power Device

Features • Optimized switching behavior at higher currents • Commutation robust fast body diode with low Qf • Superior gate oxide reliability • Tj,max=175°C and excellent thermal behavior • Lower RDS(on) and pulse current dependency on temperature • Increased avalanche capability • Compatib

文件：1.46768 Mbytes 页数：15 Pages

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丝印：65R125F7；Package：PG-HDSOP-22；650V CoolMOSª CFD7 SJ Power Device

Features • Ultra-fast body diode • 650V break down voltage • Best-in-class RDS(on) • Reduced switching losses • Low RDS(on) dependency over temperature Benefits • Excellent hard commutation ruggedness • Extra safety margin for designs with increased bus voltage • Enabling increased powe

文件：1.33147 Mbytes 页数：14 Pages

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丝印：65R115F7；Package：PG-VSON-4；650VCoolMOSªCFD7SJPowerDevice

Features •Ultra-fastbodydiode •650Vbreakdownvoltage •Best-in-classRDS(on) •Reducedswitchinglosses •LowRDS(on)dependencyovertemperature Benefits •Excellenthardcommutationruggedness •Extrasafetymarginfordesignswithincreasedbusvoltage •Enablingincreasedpowerdensitysolutions •Outstandingli

文件：1.40235 Mbytes 页数：14 Pages

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丝印：65R115F7；Package：PG-VSON-4；650V CoolMOS짧 CFD7 SJ Power Device

The latest 650 V CoolMOS™ CFD7 extends the voltage class offering of the CFD7 family and is a successor to the 650 V CoolMOS™ CFD2. Resulting from improved switching performance and excellent thermal behavior, 650 V CooMOS™ CFD7 offers highest efficiency in resonant switching topologies, such

文件：1.40356 Mbytes 页数：14 Pages

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丝印：65R130F7；Package：PG-VSON-4；650V CoolMOS짧 CFD7 SJ Power Device

MOSFET 650V CoolMOSª CFD7 SJ Power Device The latest 650 V CoolMOS™ CFD7 extends the voltage class offering of the CFD7 family and is a successor to the 650 V CoolMOS™ CFD2. Resulting from improved switching performance and excellent thermal behavior, 650 V CooMOS™ CFD7 offers highest efficie

文件：1.39494 Mbytes 页数：14 Pages

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丝印：65R160F7；Package：PG-VSON-4；650V CoolMOSª CFD7 SJ Power Device

Features • Ultra-fast body diode • 650V break down voltage • Best-in-class RDS(on) • Reduced switching losses • Low RDS(on) dependency over temperature

文件：1.37456 Mbytes 页数：14 Pages

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丝印：65R110F7；Package：PG-TO220-3；650V CoolMOSª CFD7 SJ Power Device

Features • Ultra-fast body diode • 650V break down voltage • Best-in-class RDS(on) • Reduced switching losses • Low RDS( dependency over temperature

文件：1.06062 Mbytes 页数：14 Pages

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丝印：65R190F7；Package：PG-TO220-3；650V CoolMOSª CFD7 SJ Power Device

Features • Ultra-fast body diode • 650V break down voltage • Best-in-class RDS(on) • Reduced switching losses • Low RDS(on) dependency over temperature

文件：1.0428 Mbytes 页数：14 Pages

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丝印：65R125F7；Package：PG-HSOF-8；650V CoolMOSª CFD7 SJ Power Device

Features • Ultra-fast body diode • 650V break down voltage • Best-in-class RDS(on) • Reduced switching losses • Low RDS(on) dependency over temperature Benefits • Excellent hard commutation ruggedness • Extra safety margin for designs with increased bus voltage • Enabling increased powe

文件：1.50643 Mbytes 页数：14 Pages

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