丝印：65R155F7；Package：PG-HSOF-8；650V CoolMOSª CFD7 SJ Power Device

Features • Ultra-fast body diode • 650V break down voltage • Best-in-class RDS(on) • Reduced switching losses • Low RDS(on) dependency over temperature Benefits • Excellent hard commutation ruggedness • Extra safety margin for designs with increased bus voltage • Enabling increased powe

文件：1.51006 Mbytes 页数：14 Pages

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丝印：65R190F7；Package：PG-HSOF-8；650V CoolMOSª CFD7 SJ Power Device

Features • Ultra-fast body diode • 650V break down voltage • Best-in-class RDS(on) • Reduced switching losses • Low RDS(on) dependency over temperature Benefits • Excellent hard commutation ruggedness • Extra safety margin for designs with increased bus voltage • Enabling increased powe

文件：1.48589 Mbytes 页数：14 Pages

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丝印：65R125F7；Package：PG-TO247-3；650V CoolMOSª CFD7 SJ Power Device

Features • Ultra-fast body diode • 650V break down voltage • Best-in-class RDS(on) • Reduced switching losses • Low RDS(on) dependency over temperature

文件：1.38498 Mbytes 页数：14 Pages

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丝印：65R180CFD；Package：TO-220F；650V Super-Junction Power MOSFET

DESCRIPTION 650V super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs， designed according to the SJ principle. The SJ MOSFET is a price-performance optimized product enabling to target cost sensitive applications in Consumer and L

文件：491.05 Kbytes 页数：8 Pages

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丝印：65R180CFD；Package：TO-220F；650V Super-Junction Power MOSFET

DESCRIPTION 650V super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs， designed according to the SJ principle. The SJ MOSFET is a price-performance optimized product enabling to target cost sensitive applications in Consumer and L

文件：491.07 Kbytes 页数：8 Pages

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丝印：65R175M；Package：DFN-8x8；650V Super-junction Power MOSFET

Description 650V Super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs，designed accordingtotheSJprinciple. The Multi-EPI SJ MOSFET provide an extremely low switching, communication and conduction losses devicewithhighest robustness m

文件：597.57 Kbytes 页数：8 Pages

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丝印：65R175M；Package：DFN-8x8；650V Super-junction Power MOSFET

Description 650V Super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs，designed accordingtotheSJprinciple. The Multi-EPI SJ MOSFET provide an extremely low switching, communication and conduction losses devicewithhighest robustness m

文件：597.6 Kbytes 页数：8 Pages

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丝印：65R107M1；Package：PG-TO263-7-12；650 V CoolSiC짧 M1 SiC Trench Power Device

文件：1.54264 Mbytes 页数：15 Pages

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丝印：65R163M1；Package：PG-TO263-7-12；650 V CoolSiC짧 M1 SiC Trench Power Device

文件：1.54908 Mbytes 页数：15 Pages

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丝印：65R107M1；Package：PG-TO247-3；650 V CoolSiC짧 M1 SiC Trench Power Device

文件：1.46377 Mbytes 页数：15 Pages

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