20A竊?50V N-CHANNEL MOSFET

文件：450.41 Kbytes 页数：6 Pages

KIA

可易亚半导体

丝印：65R190F7；Package：PG-TO220-3；650V CoolMOSª CFD7 SJ Power Device

Features • Ultra-fast body diode • 650V break down voltage • Best-in-class RDS(on) • Reduced switching losses • Low RDS(on) dependency over temperature

文件：1.0428 Mbytes 页数：14 Pages

INFINEON

英飞凌

丝印：65R190F7；Package：PG-HSOF-8；650V CoolMOSª CFD7 SJ Power Device

Features • Ultra-fast body diode • 650V break down voltage • Best-in-class RDS(on) • Reduced switching losses • Low RDS(on) dependency over temperature Benefits • Excellent hard commutation ruggedness • Extra safety margin for designs with increased bus voltage • Enabling increased powe

文件：1.48589 Mbytes 页数：14 Pages

INFINEON

英飞凌

N-Channel MOSFET Transistor

• DESCRIPTION • Provide all benefits of a fast switching SJ MOSFET while offering an extremely fast and robust body diode • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.19Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations f

文件：339.16 Kbytes 页数：2 Pages

ISC

无锡固电

650V CoolMOS C6 CFD POWER Transistor

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 650V CoolMOS™ CFD2 series combines the experience of the leading SJ MOSFET supplier with high class innovation. Applic

文件：6.53687 Mbytes 页数：20 Pages

INFINEON

英飞凌

Metal Oxide Semiconductor Field Effect Transistor

文件：2.19785 Mbytes 页数：16 Pages

INFINEON

英飞凌