丝印：65N；Package：SC-70-5；High-Performance Single 150mA LDO

General Description The MIC5365/6 is an advanced general purpose linear regulator offering high power supply rejection (PSRR) in an ultra-small 1mm x 1mm package. The MIC5366 includes an auto-discharge feature that is activated when the enable pin is low. The MIC5365/6 is capable of sourcing 150m

文件：532.88 Kbytes 页数：18 Pages

Microchip

微芯科技

丝印：65N10SA；Package：TO-252AA；100V N-Channel Enhancement Mode MOSFET

Features  RDS(ON), VGS@10V, ID@20A

文件：479.36 Kbytes 页数：6 Pages

PANJIT

強茂

丝印：65N40；Package：PDFN3X3-8L；N-Channel Enhancement Mode Power MOSFET

Feature 40V,65A RDS(ON)

文件：800.57 Kbytes 页数：7 Pages

RECTRON

丽正国际

丝印：65N40；Package：PDFN3X3-8L；N-Channel Enhancement Mode Power MOSFET

Feature 40V,65A RDS(ON)

文件：991.49 Kbytes 页数：7 Pages

RECTRON

丽正国际

丝印：65N40；Package：DFN5X6-8L；N-Channel Enhancement Mode Power MOSFET

Feature 40V,65A RDS(ON)

文件：934.66 Kbytes 页数：7 Pages

RECTRON

丽正国际

丝印：65N160M9；Package：DPAK；N-channel 650 V, 132 mΩ typ., 20 A MDmesh M9 Power MOSFET in a DPAK package

Description This N-channel Power MOSFET is based on the most innovative super-junction MDmesh M9 technology, suitable for medium/high voltage MOSFETs featuring very low RDS(on) per area. The silicon based M9 technology benefits from a multi-drain manufacturing process which allows an enhanced

文件：336.04 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

丝印：65N150M9；Package：TO-220；N-channel 650 V, 128 mΩ typ., 20 A MDmesh M9 Power MOSFET in a TO-220 package

Description This N-channel Power MOSFET is based on the most innovative super-junction MDmesh M9 technology, suitable for medium/high voltage MOSFETs featuring very low RDS(on) per area. The silicon based M9 technology benefits from a multi-drain manufacturing process which allows an enhanced

文件：233.17 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

丝印：65N03L5；Package：PG-TSDSON-8FL；OptiMOSTM Power-MOSFET, 30 V

文件：1.03144 Mbytes 页数：11 Pages

Infineon

英飞凌

丝印：65N60DM6；Package：TO-LL；N?멵hannel 600 V, 67 m廓 typ., 46 A MDmesh DM6 Power MOSFET in a TO?멛L package

文件：1.56267 Mbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

丝印：65N60DM6；Package：TO-247；N-channel 600 V, 60 m廓 typ., 46 A MDmesh DM6 Power MOSFETs in a TO??47 and TO??47 long leads packages

文件：340.49 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体