| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
Marking：65R010M2；Package：PG-TO263-7；CoolSiC™ MOSFET 650 V G2 Features •Ultra‑lowswitchinglosses •Benchmarkgatethresholdvoltage,VGS(th)=4.5V •Robustagainstparasiticturn‑onevenwith0Vturn‑offgatevoltage •Flexibledrivingvoltageandcompatiblewithbipolardrivingscheme •Robustbodydiodeoperationunderhardcommutationevents • | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
Marking：65R010M2；Package：PG-HDSOP-22；CoolSiC™ MOSFET 650 V G2 Features •Ultra‑lowswitchinglosses •Benchmarkgatethresholdvoltage,VGS(th)=4.5V •Robustagainstparasiticturn‑onevenwith0Vturn‑offgatevoltage •Flexibledrivingvoltageandcompatiblewithbipolardrivingscheme •Robustbodydiodeoperationunderhardcommutationevents • | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
Marking：65R010M2；Package：PG-HSOF-8；CoolSiC™ MOSFET 650 V G2 Features •Ultra‑lowswitchinglosses •Benchmarkgatethresholdvoltage,VGS(th)=4.5V •Robustagainstparasiticturn‑onevenwith0Vturn‑offgatevoltage •Flexibledrivingvoltageandcompatiblewithbipolardrivingscheme •Robustbodydiodeoperationunderhardcommutationevents • | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
Marking：65R010M2；Package：PG-TO247-3；SiC MOSFET CoolSiC™ MOSFET 650 V G2 Features •Ultra‑lowswitchinglosses •Benchmarkgatethresholdvoltage,VGS(th)=4.5V •Robustagainstparasiticturn‑onevenwith0Vturn‑offgatevoltage •Flexibledrivingvoltageandcompatiblewithbipolardrivingscheme •Robustbodydiodeoperationunderhardcommutationevents • | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
Marking：65R010M2；Package：PG-TO247-4；SiC MOSFET CoolSiC™ MOSFET 650 V G2 Features •Ultra‑lowswitchinglosses •Benchmarkgatethresholdvoltage,VGS(th)=4.5V •Robustagainstparasiticturn‑onevenwith0Vturn‑offgatevoltage •Flexibledrivingvoltageandcompatiblewithbipolardrivingscheme •Robustbodydiodeoperationunderhardcommutationevents • | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon |
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