IMT65R010M2H中文资料英飞凌数据手册PDF规格书

Features

• Ultra‑low switching losses

• Benchmark gate threshold voltage, VGS(th) = 4.5 V

• Robust against parasitic turn‑on even with 0 V turn‑off gate voltage

• Flexible driving voltage and compatible with bipolar driving scheme

• Robust body diode operation under hard commutation events

• .XT interconnection technology for best‑in‑class thermal performance

Benefits

• Enables high efficiency and high power density designs

• Facilitates great ease of use and integration

•Provides the best price performance ratio compared to Industry’s most

ambitious roadmaps

• Reduces the size, weight and bill of materials of the systems

• Enhances system robustness and reliability