STD65N160M9中文资料意法半导体数据手册PDF规格书

厂商型号	STD65N160M9
功能描述	N-channel 650 V, 132 mΩ typ., 20 A MDmesh M9 Power MOSFET in a DPAK package
丝印标识	65N160M9
封装外壳	DPAK
文件大小	336.04 Kbytes
页面数量	15 页
生产厂商	STMicroelectronics
企业简称	STMICROELECTRONICS【意法半导体】
中文名称	意法半导体集团官网
原厂标识
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-6-23 9:11:00
人工找货	STD65N160M9价格和库存，欢迎联系客服免费人工找货

Description

This N-channel Power MOSFET is based on the most innovative super-junction

MDmesh M9 technology, suitable for medium/high voltage MOSFETs featuring very

low RDS(on) per area. The silicon based M9 technology benefits from a multi-drain

manufacturing process which allows an enhanced device structure. The resulting

product has one of the lower on-resistance and reduced gate charge values,

among all silicon based fast switching super-junction Power MOSFETs, making

it particularly suitable for applications that require superior power density and

outstanding efficiency.

Features

• Worldwide best FOM RDS(on)*Qg among silicon-based devices

• Higher VDSS rating

• Higher dv/dt capability

• Excellent switching performance

• Easy to drive

• 100 avalanche tested

• Zener-protected

Applications

• High efficiency switching applications