N沟道600 V、60 mOhm典型值、38 A MDmesh DM6功率MOSFET，TO-247封装

These high-voltage N-channel Power MOSFETs are part of the MDmesh DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching • Fast-recovery body diode \n• Lower RDS(on) per area vs previous generation \n• Low gate charge, input capacitance and resistance \n• 100% avalanche tested \n• Extremely high dv/dt ruggedness \n• Zener-protected;

ST

意法半导体

丝印：65N60DM6；Package：TO-247；N-channel 600 V, 60 m廓 typ., 46 A MDmesh DM6 Power MOSFETs in a TO??47 and TO??47 long leads packages

文件：340.49 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

Package：TO-247-3；包装：管件 类别：分立半导体产品 晶体管 - FET，MOSFET - 单个 描述：MOSFET N-CH 600V 38A TO247

STMICROELECTRONICS

意法半导体

N-channel 600 V, 60 m廓 typ., 46 A MDmesh DM6 Power MOSFETs in a TO??47 and TO??47 long leads packages

文件：340.49 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体