STW65N60DM6

N沟道600 V、60 mOhm典型值、38 A MDmesh DM6功率MOSFET，TO-247封装; • Fast-recovery body diode \n• Lower RDS(on) per area vs previous generation \n• Low gate charge, input capacitance and resistance \n• 100% avalanche tested \n• Extremely high dv/dt ruggedness \n• Zener-protected;

These high-voltage N-channel Power MOSFETs are part of the MDmesh DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.\n\n

STW65N60DM6

丝印：65N60DM6；Package：TO-247；N-channel 600 V, 60 m廓 typ., 46 A MDmesh DM6 Power MOSFETs in a TO??47 and TO??47 long leads packages

STW65N60DM6

Package：TO-247-3；包装：管件 类别：分立半导体产品 晶体管 - FET，MOSFET - 单个 描述：MOSFET N-CH 600V 38A TO247

STO65N60DM6

N?멵hannel600V,67m廓typ.,46AMDmeshDM6PowerMOSFETinaTO?멛Lpackage

STWA65N60DM6

N-channel600V,60m廓typ.,46AMDmeshDM6PowerMOSFETsinaTO??47andTO??47longleadspackages